发明授权
US07521351B2 Method for forming a semiconductor product and semiconductor product
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用于形成半导体产品和半导体产品的方法
- 专利标题: Method for forming a semiconductor product and semiconductor product
- 专利标题(中): 用于形成半导体产品和半导体产品的方法
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申请号: US11172366申请日: 2005-06-30
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公开(公告)号: US07521351B2公开(公告)日: 2009-04-21
- 发明人: Thomas Mikolajick , Torsten Mueller , Nicolas Nagel , Lars Bach , Dominik Olligs , Veronika Polei
- 申请人: Thomas Mikolajick , Torsten Mueller , Nicolas Nagel , Lars Bach , Dominik Olligs , Veronika Polei
- 申请人地址: DE Munich
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Munich
- 代理机构: Slater & Matsil, L.L.P.
- 主分类号: H01L21/4763
- IPC分类号: H01L21/4763
摘要:
A semiconductor product includes, a substrate with a first dielectric layer having contact hole fillings for contacting active areas in the substrate. A second dielectric layer with contact holes is provided therein. The contact holes have a width in a first lateral direction. The product further includes conductive lines, each conductive line passing over contact holes in the second dielectric layer and contacting a plurality of contact hole fillings in the first dielectric layer. The conductive lines have a width, in the first lateral direction, that is smaller than the width of the contact holes of the second dielectric layer. The conductive lines are in direct mechanical contact with the contact hole fillings and thereby remove the need to provide any conventional “contact to interconnect” structures.
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