发明授权
- 专利标题: Deposition and densification process for titanium nitride barrier layers
- 专利标题(中): 氮化钛阻挡层的沉积和致密化过程
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申请号: US11869557申请日: 2007-10-09
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公开(公告)号: US07521379B2公开(公告)日: 2009-04-21
- 发明人: Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
- 申请人: Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Patterson & Sheridan, LLP
- 主分类号: H01L21/44
- IPC分类号: H01L21/44 ; H01L21/469
摘要:
In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.