发明授权
- 专利标题: Fin-type channel transistor and method of manufacturing the same
- 专利标题(中): 鳍型沟道晶体管及其制造方法
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申请号: US11384269申请日: 2006-03-21
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公开(公告)号: US07521752B2公开(公告)日: 2009-04-21
- 发明人: Atsuhiro Kinoshita , Junji Koga , Yukio Nakabayashi
- 申请人: Atsuhiro Kinoshita , Junji Koga , Yukio Nakabayashi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权: JP2005-092267 20050328; JP2006-027300 20060203
- 主分类号: H01L27/108
- IPC分类号: H01L27/108 ; H01L29/94
摘要:
It is possible to reliably implant an impurity into an impurity forming region, and to form a self-aligned silicides on the entire portion of the source and drain regions. There are provided: a first semiconductor layer of a first conductivity type in a substantially a rectangular solid shape formed on a substrate; a gate electrode formed on a pair of first side portions of the first semiconductor layer facing to each other with a gate insulating film being placed between the gate electrode and the first side portions; a second semiconductor layer of the first conductivity type connected to bottom portions of a pair of second side portions of the first semiconductor layer placed in a substantially perpendicular direction with respect to the first side portions, the second semiconductor layer extending along the substantially perpendicular direction; a first impurity region of a second conductivity type formed in the second semiconductor layer; second impurity regions formed on the pair of side portions of the first semiconductor layer and connected to the first impurity region; and a channel region formed between the second impurity regions of the first semiconductor layer.