发明授权
- 专利标题： Conformal doping apparatus and method
- 专利标题（中）： 保形掺杂装置及方法
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申请号： US11163307申请日： 2005-10-13
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公开(公告)号： US07524743B2公开(公告)日： 2009-04-28
- 发明人: Atul Gupta , Vikram Singh , Timothy Miller , Edmund Jacques Winder
- 申请人： Atul Gupta , Vikram Singh , Timothy Miller , Edmund Jacques Winder
- 申请人地址： US MA Gloucester
- 专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人： Varian Semiconductor Equipment Associates, Inc.
- 当前专利权人地址： US MA Gloucester
- 主分类号： H01L21/423
- IPC分类号： H01L21/423 ; H01L21/425
摘要：
A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.
公开/授权文献
- US20070087574A1 CONFORMAL DOPING APPARATUS AND METHOD 公开/授权日：2007-04-19
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