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公开(公告)号:US07524743B2
公开(公告)日:2009-04-28
申请号:US11163307
申请日:2005-10-13
IPC分类号: H01L21/423 , H01L21/425
CPC分类号: H01J37/32623 , H01J37/32412 , H01J37/32697 , H01L21/2236 , H01L21/26506 , H01L21/26526 , H01L21/26586 , H01L29/66803
摘要: A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.
摘要翻译: 掺杂的方法包括在衬底的非平面和平面特征上沉积掺杂剂材料层。 惰性进料气体产生惰性离子。 向衬底提取惰性离子,在衬底上物理地将掺杂剂材料敲入衬底的平面和非平面特征。