发明授权
- 专利标题： Method of manufacturing complementary diodes
- 专利标题（中）： 制造互补二极管的方法
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申请号： US11521924申请日： 2006-09-15
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公开(公告)号： US07528017B2公开(公告)日： 2009-05-05
- 发明人: Vivek Subramanian , Patrick Smith
- 申请人： Vivek Subramanian , Patrick Smith
- 申请人地址： US CA Milpitas
- 专利权人： Kovio, Inc.
- 当前专利权人： Kovio, Inc.
- 当前专利权人地址： US CA Milpitas
- 代理商 Andrew D. Fortney
- 主分类号： H01L21/20
- IPC分类号： H01L21/20
摘要：
Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.
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