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    Process-variation tolerant diode, standard cells including the same, tags and sensors containing the same, and methods for manufacturing the same
    1.
    发明授权
    Process-variation tolerant diode, standard cells including the same, tags and sensors containing the same, and methods for manufacturing the same 有权
    过程变异耐受二极管，包括相同的标准单元，标签和包含其的传感器及其制造方法

    公开(公告)号：US07932537B2

    公开(公告)日：2011-04-26

    申请号：US12424509

    申请日：2009-04-15

    申请人： Vivek Subramanian ,  Patrick Smith

    发明人： Vivek Subramanian ,  Patrick Smith

    IPC分类号： H01L29/70

    CPC分类号： H01L29/86 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/1292 ,  Y10S257/91 ,  Y10T307/964

    摘要： Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.

    摘要翻译： 公开了包含这种二极管和TFT的工艺变容二极管和二极管连接的薄膜晶体管（TFT），印刷或图案化结构（例如电路），其制造方法及其用于识别标签和传感器的应用。 包括串联的互补二极管或二极管连接的TFT的图案化结构可以稳定使用印刷或激光写入技术制造的二极管的阈值电压（Vt）。 本发明有利地利用NMOS TFT（Vtn）的Vt和PMOS TFT（Vtp）的Vt之间的间隔来建立和/或提高印刷或激光写入的二极管上的正向压降的稳定性。 本发明的其它应用涉及参考电压发生器，电压钳位电路，控制相关或差分信号传输线上的电压的方法，以及RFID和EAS标签和传感器。

    Wireless devices including printed integrated circuitry and methods for manufacturing and using the same
    2.
    发明授权
    Wireless devices including printed integrated circuitry and methods for manufacturing and using the same 有权
    无线设备，包括印刷集成电路及其制造和使用方法

    公开(公告)号：US09004366B2

    公开(公告)日：2015-04-14

    申请号：US12249707

    申请日：2008-10-10

    申请人： Patrick Smith ,  Criswell Choi ,  Vikram Pavate ,  James Montague Cleeves ,  Vivek Subramanian ,  Richard Young ,  Vince Biviano

    发明人： Patrick Smith ,  Criswell Choi ,  Vikram Pavate ,  James Montague Cleeves ,  Vivek Subramanian ,  Richard Young ,  Vince Biviano

    IPC分类号： G06K19/06 ,  G08B13/14 ,  H01L21/30 ,  H01L23/02 ,  G06K19/077

    CPC分类号： G06K19/07749 ,  G06K19/0775 ,  G06K19/07752 ,  Y10T29/49124

    摘要： Printed integrated circuitry and attached antenna and/or inductor for sensors, electronic article surveillance (EAS), radio frequency (RF) and/or RF identification (RFID) tags and devices, and methods for its manufacture. The tag generally includes printed integrated circuitry on one carrier and an antenna and/or inductor on another carrier, the integrated circuitry being electrically coupled to the antenna and/or inductor. The method of manufacture generally includes of printing an integrated circuit having a plurality of first pads on a carrier, forming an antenna and/or inductor having a plurality of second pads on a substrate, and attaching at least two of the first pads of the printed integrated circuit to corresponding second pads of the antenna and/or inductor. The present invention advantageously provides a low cost RFID tag capable of operating at MHz frequencies that can be manufactured in a shorter time period than conventional RFID tags that manufacture all active electrical devices on a conventional wafer.

    摘要翻译： 用于传感器，电子物品监视（EAS），射频（RF）和/或RF识别（RFID）标签和设备的印刷集成电路和连接的天线和/或电感器及其制造方法。 标签通常包括在一个载体上的印刷集成电路和另一个载体上的天线和/或电感器，该集成电路电耦合到天线和/或电感器。 制造方法通常包括印刷在载体上具有多个第一焊盘的集成电路，形成在衬底上具有多个第二焊盘的天线和/或电感器，以及附接印刷的至少两个第一焊盘 集成电路到天线和/或电感器的对应的第二焊盘。 本发明有利地提供了一种低成本的RFID标签，能够以比在传统晶片上制造所有有源电气设备的常规RFID标签更短的时间周期内以MHz频率工作。

    Multi-mode tags and methods of making and using the same
    4.
    发明授权
    Multi-mode tags and methods of making and using the same 失效
    多模式标签及其制作和使用方法

    公开(公告)号：US07750792B2

    公开(公告)日：2010-07-06

    申请号：US11870775

    申请日：2007-10-11

    申请人： Patrick Smith ,  James Montague Cleeves ,  Vikram Pavate ,  Vivek Subramanian

    发明人： Patrick Smith ,  James Montague Cleeves ,  Vikram Pavate ,  Vivek Subramanian

    IPC分类号： H04Q5/22

    CPC分类号： G06K19/0707 ,  G06K19/0712 ,  G06K19/0723 ,  G08B13/2448 ,  H04W88/06 ,  Y02D70/166

    摘要： Multi-mode (e.g., EAS and RFID) tags and methods for making and using the same are disclosed. The tag generally includes an antenna, an electronic article surveillance (EAS) function block coupled to the antenna, and one or more identification function blocks coupled to the antenna in parallel with the EAS function block. The method of reading the tag generally includes the steps of applying an electric field to the tag, detecting the tag when the electric field has a relatively low power, and detecting an identification signal from the tag when the electric field has a relatively high power. The present invention advantageously enables a single tag to be used for both inventory and anti-theft purposes, thereby improving inventory management and control at reduced system and/or “per-article” costs.

    摘要翻译： 公开了多模式（例如，EAS和RFID）标签及其制造和使用方法。 标签通常包括耦合到天线的天线，电子物品监视（EAS）功能块以及与EAS功能块并行耦合到天线的一个或多个识别功能块。 读取标签的方法通常包括对标签施加电场的步骤，当电场具有相对低的功率时检测标签，以及当电场具有相对高的功率时，从标签中检测识别信号。 本发明有利地使单个标签用于库存和防盗目的，从而改进库存管理和减少系统和/或“每件物品”成本的控制。

    Surveillance devices with multiple capacitors
    7.
    发明授权
    Surveillance devices with multiple capacitors 有权
    具有多个电容器的监控设备

    公开(公告)号：US08912890B2

    公开(公告)日：2014-12-16

    申请号：US13632745

    申请日：2012-10-01

    申请人： Patrick Smith ,  Criswell Choi ,  James Montague Cleeves ,  Vivek Subramanian ,  Arvind Kamath ,  Steven Molesa

    发明人： Patrick Smith ,  Criswell Choi ,  James Montague Cleeves ,  Vivek Subramanian ,  Arvind Kamath ,  Steven Molesa

    IPC分类号： H04Q5/22

    CPC分类号： H01G4/40 ,  H01G4/38

    摘要： The disclosure relates to surveillance and/or identification devices having capacitors connected in parallel or in series, and methods of making and using such devices. Devices with capacitors connected in parallel, where one capacitor is fabricated with a relatively thick capacitor dielectric and another is fabricated with a relatively thin capacitor dielectric achieve both a high-precision capacitance and a low breakdown voltage for relatively easy surveillance tag deactivation. Devices with capacitors connected in series result in increased lateral dimensions of a small capacitor. This makes the capacitor easier to fabricate using techniques that may have relatively limited resolution capabilities.

    摘要翻译： 本公开涉及具有并联或串联连接的电容器的监视和/或识别装置以及制造和使用这些装置的方法。 具有并联连接电容器的器件，其中一个电容器用相对较厚的电容器电介质制造，另一个电容器由相对薄的电容器电介质制成，实现了高精度电容和低击穿电压，以便相对容易的监视标签去激活。 具有串联连接的电容器的装置增加了小电容器的横向尺寸。 这使得使用可能具有相对有限的分辨能力的技术来制造电容器更容易。

    Process-variation tolerant series-connected NMOS and PMOS diodes, and standard cells, tags, and sensors containing the same
    8.
    发明授权
    Process-variation tolerant series-connected NMOS and PMOS diodes, and standard cells, tags, and sensors containing the same 有权
    工艺变异容差串联NMOS和PMOS二极管，以及标准单元，标签和含有这些二极管的传感器

    公开(公告)号：US08471308B2

    公开(公告)日：2013-06-25

    申请号：US13047627

    申请日：2011-03-14

    申请人： Vivek Subramanian ,  Patrick Smith

    发明人： Vivek Subramanian ,  Patrick Smith

    IPC分类号： H01L29/76

    CPC分类号： H01L29/86 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/1292 ,  Y10S257/91 ,  Y10T307/964

    摘要： Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.

    摘要翻译： 公开了包含这种二极管和TFT的工艺变容二极管和二极管连接的薄膜晶体管（TFT），印刷或图案化结构（例如电路），其制造方法及其用于识别标签和传感器的应用。 包括串联的互补二极管或二极管连接的TFT的图案化结构可以稳定使用印刷或激光写入技术制造的二极管的阈值电压（Vt）。 本发明有利地利用NMOS TFT（Vtn）的Vt和PMOS TFT（Vtp）的Vt之间的间隔来建立和/或提高印刷或激光写入的二极管上的正向压降的稳定性。 本发明的其它应用涉及参考电压发生器，电压钳位电路，控制相关或差分信号传输线上的电压的方法，以及RFID和EAS标签和传感器。

    Method of manufacturing complementary diodes
    9.
    发明授权
    Method of manufacturing complementary diodes 有权
    制造互补二极管的方法

    公开(公告)号：US07528017B2

    公开(公告)日：2009-05-05

    申请号：US11521924

    申请日：2006-09-15

    申请人： Vivek Subramanian ,  Patrick Smith

    发明人： Vivek Subramanian ,  Patrick Smith

    IPC分类号： H01L21/20

    CPC分类号： H01L29/86 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/1292 ,  Y10S257/91 ,  Y10T307/964

    摘要： Process variation-tolerant diodes and diode-connected thin film transistors (TFTs), printed or patterned structures (e.g., circuitry) containing such diodes and TFTs, methods of making the same, and applications of the same for identification tags and sensors are disclosed. A patterned structure comprising a complementary pair of diodes or diode-connected TFTs in series can stabilize the threshold voltage (Vt) of a diode manufactured using printing or laser writing techniques. The present invention advantageously utilizes the separation between the Vt of an NMOS TFT (Vtn) and the Vt of a PMOS TFT (Vtp) to establish and/or improve stability of a forward voltage drop across a printed or laser-written diode. Further applications of the present invention relate to reference voltage generators, voltage clamp circuits, methods of controlling voltages on related or differential signal transmission lines, and RFID and EAS tags and sensors.

    摘要翻译： 公开了包含这种二极管和TFT的工艺变容二极管和二极管连接的薄膜晶体管（TFT），印刷或图案化结构（例如电路），其制造方法及其用于识别标签和传感器的应用。 包括串联的互补二极管或二极管连接的TFT的图案化结构可以稳定使用印刷或激光写入技术制造的二极管的阈值电压（Vt）。 本发明有利地利用NMOS TFT（Vtn）的Vt和PMOS TFT（Vtp）的Vt之间的间隔来建立和/或提高印刷或激光写入的二极管上的正向压降的稳定性。 本发明的其它应用涉及参考电压发生器，电压钳位电路，控制相关或差分信号传输线上的电压的方法，以及RFID和EAS标签和传感器。