Invention Grant
- Patent Title: Method of forming high etch resistant resist patterns
- Patent Title (中): 形成高耐腐蚀抗蚀剂图案的方法
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Application No.: US11209684Application Date: 2005-08-24
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Publication No.: US07531296B2Publication Date: 2009-05-12
- Inventor: Ching-Yu Chang , Chin-Hsiang Lin
- Applicant: Ching-Yu Chang , Chin-Hsiang Lin
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing, Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing, Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: G03F7/26
- IPC: G03F7/26
Abstract:
A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.
Public/Granted literature
- US20070048675A1 Method of forming high etch resistant resist patterns Public/Granted day:2007-03-01
Information query
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