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    Immersion lithography apparatus and methods
    2.
    发明授权
    Immersion lithography apparatus and methods 有权
    浸渍光刻设备及方法

    公开(公告)号：US07986395B2

    公开(公告)日：2011-07-26

    申请号：US11427421

    申请日：2006-06-29

    申请人： Ching-Yu Chang ,  Burn Jeng Lin ,  Chin-Hsiang Lin

    发明人： Ching-Yu Chang ,  Burn Jeng Lin ,  Chin-Hsiang Lin

    IPC分类号： G03B27/42

    CPC分类号： G03F7/70925 ,  G03F7/70341

    摘要： A lithography apparatus includes an imaging lens module; a substrate table positioned underlying the imaging lens module and configured to hold a substrate; and a cleaning module adapted to clean the lithography apparatus. The cleaning module is selected from the group consisting of an ultrasonic unit, a scrubber, a fluid jet, an electrostatic cleaner, and combinations thereof.

    摘要翻译： 光刻设备包括成像透镜模块; 位于所述成像透镜模块下方且被配置为保持基板的基板台; 以及适于清洁光刻设备的清洁模块。 清洁模块选自超声波单元，洗涤器，流体射流，静电清洁器及其组合。

    Method of forming high etch resistant resist patterns
    4.
    发明申请
    Method of forming high etch resistant resist patterns 有权
    形成高耐腐蚀抗蚀剂图案的方法

    公开(公告)号：US20070048675A1

    公开(公告)日：2007-03-01

    申请号：US11209684

    申请日：2005-08-24

    申请人： Ching-Yu Chang ,  Chin-Hsiang Lin

    发明人： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC分类号： G03F7/26

    CPC分类号： G03F7/40 ,  G03F7/405

    摘要： A method for forming an etch-resistant photoresist pattern on a semiconductor substrate is provided. In one embodiment, a photoresist layer is formed on the substrate. The photoresist layer is exposed and developed to form a photoresist pattern. A polymer-containing layer is formed over the photoresist pattern. The photoresist pattern and the polymer-containing layer are thermally treated so that polymer is substantially diffused into the photoresist pattern thereby enhancing the etch resistance of the photoresist pattern. The polymer-containing layer is thereafter removed.

    摘要翻译： 提供了一种在半导体衬底上形成耐蚀刻光刻胶图案的方法。 在一个实施例中，在基板上形成光致抗蚀剂层。 光致抗蚀剂层被曝光和显影以形成光致抗蚀剂图案。 在光致抗蚀剂图案上形成含聚合物的层。 光致抗蚀剂图案和含聚合物的层被热处理，使得聚合物基本上扩散到光致抗蚀剂图案中，从而增强光致抗蚀剂图案的耐蚀刻性。 然后除去含聚合物的层。

    Photoresist materials and photolithography processes
    5.
    发明授权
    Photoresist materials and photolithography processes 有权
    光刻胶材料和光刻工艺

    公开(公告)号：US08848163B2

    公开(公告)日：2014-09-30

    申请号：US13050251

    申请日：2011-03-17

    申请人： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    发明人： Hsien-Cheng Wang ,  Chin-Hsiang Lin ,  Heng-Jen Lee ,  Ching-Yu Chang ,  Hua-Tai Lin ,  Burn Jeng Lin

    IPC分类号： G03B27/52 ,  G03B27/42

    CPC分类号： G03F7/0397 ,  G03F7/0045 ,  G03F7/0392 ,  G03F7/30 ,  G03F7/38 ,  G03F7/70858 ,  Y10S430/106 ,  Y10S430/111

    摘要： A lithography apparatus generates a tunable magnetic field to facilitate processing of photoresist. The lithography apparatus includes a chamber and a substrate stage in the chamber operable to hold a substrate. A magnetic module provides a magnetic field to the substrate on the substrate stage. The magnetic module is configured to provide the magnetic field in a tunable and alternating configuration with respect to its magnitude and frequency. The magnetic field is provided to have a gradient in magnitude along a Z-axis that is perpendicular to the substrate stage to cause magnetically-charged particles disposed over the substrate stage to move up and down along the Z-axis. The lithography apparatus also includes a radiation energy source and an objective lens configured to receive radiation energy from the radiation energy source and direct the radiation energy toward the substrate positioned on the substrate stage.

    摘要翻译： 光刻设备产生可调磁场以便于光致抗蚀剂的加工。 光刻设备包括腔室和腔室中的衬底台，其可操作以保持衬底。 磁性模块为衬底台上的衬底提供磁场。 磁模块被配置为相对于其幅度和频率提供可调和交替配置的磁场。 磁场被提供为具有沿垂直于衬底台的Z轴的幅度梯度，以使得设置在衬底台上的带磁性颗粒沿Z轴上下移动。 光刻设备还包括辐射能量源和物镜，其被配置为从辐射能量源接收辐射能量并将辐射能量引向位于衬底台上的衬底。

    PHOTOLITHOGRAPHY PROCESS INCLUDING A CHEMICAL RINSE
    8.
    发明申请
    PHOTOLITHOGRAPHY PROCESS INCLUDING A CHEMICAL RINSE 审中-公开
    包括化学冲洗的光刻工艺

    公开(公告)号：US20080280230A1

    公开(公告)日：2008-11-13

    申请号：US11747124

    申请日：2007-05-10

    申请人： Ching-Yu Chang ,  Chin-Hsiang Lin

    发明人： Ching-Yu Chang ,  Chin-Hsiang Lin

    IPC分类号： G03C5/00

    CPC分类号： G03F7/40 ,  G03F7/38

    摘要： The present disclosure provides a plurality of methods of performing a lithography process. In one embodiment, a substrate including a layer of photoresist is provided. The layer of photoresist is exposed. The exposed layer of photoresist is developed. A chemical rinse solution is applied to the developed photoresist. The chemical rinse solution includes an alcohol base chemical. The substrate is spun dry.

    摘要翻译： 本公开提供了执行光刻工艺的多种方法。 在一个实施例中，提供了包括光致抗蚀剂层的基板。 曝光该光致抗蚀剂层。 曝光的光致抗蚀剂层被开发出来。 将化学冲洗溶液施加到显影的光致抗蚀剂上。 化学冲洗液包括醇基化学品。 将基材旋转干燥。