发明授权
US07531407B2 Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same
失效
具有高Q晶片背面电感器的半导体集成电路器件及其制造方法
- 专利标题： Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same
- 专利标题（中）： 具有高Q晶片背面电感器的半导体集成电路器件及其制造方法
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申请号： US11488242申请日： 2006-07-18
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公开(公告)号： US07531407B2公开(公告)日： 2009-05-12
- 发明人: Lawrence Clevenger , Timothy Joseph Dalton , Louis Hsu , Carl Radens , Vidhya Ramachandran , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人： Lawrence Clevenger , Timothy Joseph Dalton , Louis Hsu , Carl Radens , Vidhya Ramachandran , Keith Kwong Hon Wong , Chih-Chao Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 Robert M. Trepp
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
Methods are provided for fabricating semiconductor IC (integrated circuit) chips having high-Q on-chip inductors formed on the chip backside and connected to integrated circuits on the chip frontside using through-wafer interconnects. For example, a semiconductor device with a backside integrated inductor includes a semiconductor substrate having a frontside, a backside and a buried insulating layer interposed between the front and backsides of the substrate. An integrated circuit is formed on the frontside of the semiconductor substrate and an integrated inductor is formed on the backside of the semiconductor substrate. An interconnection structure is formed through the buried insulating layer to connect the integrated inductor to the integrated circuit. The semiconductor substrate may be an SOI (silicon on insulator) structure.
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