发明授权
US07531492B2 Composition for the removal of sidewall residues 有权
用于去除侧壁残留物的组合物

Composition for the removal of sidewall residues
摘要:
A composition for the production of semiconductors, comprising H2SiF6 and/or HBF4 in a total amount of 10-500 mg/kg, 1-17 % by weight of H2S04, 1-15% by weight of H202, optionally in combination with additives, in aqueous solution and a process of removing residual polymers using the composition.
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