发明授权
US07531835B2 Increased mobility from organic semiconducting polymers field-effect transistors
有权
有机半导体聚合物场效应晶体管的迁移率增加
- 专利标题： Increased mobility from organic semiconducting polymers field-effect transistors
- 专利标题（中）： 有机半导体聚合物场效应晶体管的迁移率增加
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申请号： US11284797申请日： 2005-11-21
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公开(公告)号： US07531835B2公开(公告)日： 2009-05-12
- 发明人: Alan J. Heeger , Daniel Moses , Guangming Wang , James S. Swensen
- 申请人： Alan J. Heeger , Daniel Moses , Guangming Wang , James S. Swensen
- 申请人地址： US CA Oakland
- 专利权人： The Regents of the University of California
- 当前专利权人： The Regents of the University of California
- 当前专利权人地址： US CA Oakland
- 代理机构： Berliner & Associates
- 主分类号： H01L35/24
- IPC分类号： H01L35/24 ; H01L51/00
摘要：
Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.