公开(公告)号：US20140042422A1

公开(公告)日：2014-02-13

申请号：US14111254

申请日：2012-03-26

申请人： Gary S. Silverman ,  Roman K. Korotkov ,  Ryan C. Smith ,  Jun Liu ,  Daniel J. Gaspar ,  Asanga B. Padmaperuma ,  Liang Wang ,  Birgit Schwenzer ,  James S. Swensen

发明人： Gary S. Silverman ,  Roman K. Korotkov ,  Ryan C. Smith ,  Jun Liu ,  Daniel J. Gaspar ,  Asanga B. Padmaperuma ,  Liang Wang ,  Birgit Schwenzer ,  James S. Swensen

IPC分类号： H01L51/52

CPC分类号： H01L51/5275 ,  H01L51/5268

摘要： A light-emitting device, which improves the light output of organic light emitting diodes (OLEDs), includes at least one porous metal or metalloid oxide light extraction layer positioned between the substrate and the transparent conducting material layer in the OLED. The index of refraction of the light extraction layer and the light scattering may be tuned by changing the pore size, pore density, doping the metal oxide, adding an insulating, conducting or semiconducting component, or filling the pores, for example. A method for forming the light-emitting device includes forming at least one light extraction layer comprising a porous metal or metalloid oxide on a substrate, for example, using atmospheric pressure chemical vapor deposition (APCVD), and subsequently, forming a transparent conducting material on the light extraction layer.

摘要翻译： 改善有机发光二极管（OLED）的光输出的发光器件包括位于OLED中的衬底和透明导电材料层之间的至少一个多孔金属或准金属氧化物光提取层。 可以通过改变孔径，孔密度，掺杂金属氧化物，添加绝缘，导电或半导体组分或填充孔，来调整光提取层的折射率和光散射。 用于形成发光器件的方法包括在基底上形成至少一个包含多孔金属或准金属氧化物的光提取层，例如使用大气压化学气相沉积（APCVD），然后形成透明导电材料 光提取层。

公开(公告)号：US07531835B2

公开(公告)日：2009-05-12

申请号：US11284797

申请日：2005-11-21

申请人： Alan J. Heeger ,  Daniel Moses ,  Guangming Wang ,  James S. Swensen

发明人： Alan J. Heeger ,  Daniel Moses ,  Guangming Wang ,  James S. Swensen

IPC分类号： H01L35/24 ,  H01L51/00

CPC分类号： H01L51/0545 ,  H01L51/0003 ,  H01L51/0036

摘要： Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.

摘要翻译： 在累积模式和耗尽模式中产生具有高迁移率的有机FET。 从通过浸涂施加RR-P3HT膜到只有大约至1um的厚度的FET获得显着更高的迁移率。 已经发现半导体聚合物在半导体聚合物和SiO 2栅绝缘体之间的界面处的结构顺序对于实现高载流子迁移率是重要的。 发现在惰性气氛下的热处理也增加了FET的导通/截止比。

公开(公告)号：US07078261B2

公开(公告)日：2006-07-18

申请号：US10320933

申请日：2002-12-16

申请人： Alan J. Heeger ,  Daniel Moses ,  Guangming Wang ,  James S. Swensen

发明人： Alan J. Heeger ,  Daniel Moses ,  Guangming Wang ,  James S. Swensen

IPC分类号： H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0003 ,  H01L51/0036

摘要： Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.

摘要翻译： 在累积模式和耗尽模式中产生具有高迁移率的有机FET。 从通过浸涂施加RR-P3HT膜到只有大约至1um的厚度的FET获得显着更高的迁移率。 已经发现半导体聚合物在半导体聚合物和SiO 2栅极绝缘体之间的界面处的结构顺序对于实现高载流子迁移率是重要的。 发现在惰性气氛下的热处理也增加了FET的导通/截止比。