公开(公告)号：US20070060819A1

公开(公告)日：2007-03-15

申请号：US11522124

申请日：2006-09-15

Applicant: Gregory Altshuler ,  Guangming Wang ,  Henry Zenzie

Inventor： Gregory Altshuler ,  Guangming Wang ,  Henry Zenzie

IPC: A61B6/00 ,  A61B5/00

CPC classification number: A61B5/0082 ,  A61B5/0059 ,  A61B5/443 ,  A61B5/444 ,  A61B5/445 ,  A61B5/6843

Abstract: The present invention is generally directed to dermatological devices and methods in which one or more skin characteristics, such as the melanin index, are determined by analyzing radiation backscattered from a skin region illuminated by at least one, and preferably, two or more wavelengths, e.g., in a range of about 600 nm to about 900 nm. In many embodiments, the radiation is coupled to the skin via a waveguide, and an optical sensor is employed to ascertain contact between the waveguide (e.g., a waveguide surface adapted for contact with the skin) and the skin.

Abstract translation: 本发明一般涉及皮肤病学装置和方法，其中通过分析由至少一个，优选地，两个或更多个波长照射的皮肤区域反向散射的辐射来确定一种或多种皮肤特征，例如黑色素指数，例如 在约600nm至约900nm的范围内。 在许多实施例中，辐射通过波导耦合到皮肤，并且使用光学传感器来确定波导（例如，适于与皮肤接触的波导表面）和皮肤之间的接触。

公开(公告)号：US20070049910A1

公开(公告)日：2007-03-01

申请号：US11500588

申请日：2006-08-08

Applicant: Gregory Altshuler ,  Henry Zenzie ,  Christopher Gaal ,  Robert Lopez ,  Guangming Wang

Inventor： Gregory Altshuler ,  Henry Zenzie ,  Christopher Gaal ,  Robert Lopez ,  Guangming Wang

IPC: A61B18/18

CPC classification number: A61B18/203 ,  A61B90/04 ,  A61B2017/00057 ,  A61B2017/308 ,  A61B2018/00005 ,  A61B2018/00452 ,  A61B2018/00458 ,  A61B2018/00476 ,  A61B2090/065

Abstract: Devices and methods for treating tissue with radiation, including light and other optical radiation, in a manner that is eye-safe are described. In one embodiment, a photocosmetic treatment device has a cavity into which tissue to be treated is drawn. The device determines whether the tissue is safe to treat and whether the tissue may be tissue associated with the eyes, such as an eyelid. In another embodiment, an eye-safe pulse of radiation is provided at a time interval prior to treatment of the tissue. The pulse is at a wavelength of radiation that the human eye perceives as particularly intense and uncomfortable, even though the pulse is not dangerous or destructive. If the device is oriented to treat eye tissue, directly or through the eyelid, the pulse will cause an aversive reaction in the subject being treated that inhibits the treatment.

Abstract translation: 描述了以眼睛安全的方式处理包括光和其他光辐射的辐射的组织的装置和方法。 在一个实施方案中，光敏化妆品处理装置具有被拉伸组织的空腔。 该装置确定组织是否安全地治疗以及组织是否可能是与眼睛相关的组织，例如眼睑。 在另一个实施例中，在处理组织之前的时间间隔提供辐射的眼睛安全脉冲。 脉冲处于辐射波长，即使脉搏不危险或具有破坏​​性，人眼也会感觉到特别强烈和不舒服。 如果该装置被定向以直接或通过眼睑治疗眼组织，则脉冲将导致被治疗受试者抑制治疗的反应。

公开(公告)号：US07078261B2

公开(公告)日：2006-07-18

申请号：US10320933

申请日：2002-12-16

Applicant: Alan J. Heeger ,  Daniel Moses ,  Guangming Wang ,  James S. Swensen

Inventor： Alan J. Heeger ,  Daniel Moses ,  Guangming Wang ,  James S. Swensen

IPC: H01L51/40

CPC classification number: H01L51/0545 ,  H01L51/0003 ,  H01L51/0036

Abstract: Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.

Abstract translation: 在累积模式和耗尽模式中产生具有高迁移率的有机FET。 从通过浸涂施加RR-P3HT膜到只有大约至1um的厚度的FET获得显着更高的迁移率。 已经发现半导体聚合物在半导体聚合物和SiO 2栅极绝缘体之间的界面处的结构顺序对于实现高载流子迁移率是重要的。 发现在惰性气氛下的热处理也增加了FET的导通/截止比。

公开(公告)号：US20060128053A1

公开(公告)日：2006-06-15

申请号：US11284797

申请日：2005-11-21

Applicant: Alan Heeger ,  Daniel Moses ,  Guangming Wang ,  James Swensen

Inventor： Alan Heeger ,  Daniel Moses ,  Guangming Wang ,  James Swensen

IPC: H01L21/00 ,  H01L51/40 ,  H01L21/31

CPC classification number: H01L51/0545 ,  H01L51/0003 ,  H01L51/0036

Abstract: Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.

公开(公告)号：US20180108693A1

公开(公告)日：2018-04-19

申请号：US15296586

申请日：2016-10-18

Applicant: Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

Inventor： Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14692

Abstract: A method of fabricating a structure including a high mobility backplane and a-Si photodiode imager includes forming a matrix of metal oxide thin film transistors on the surface of a rigid support member, depositing a planarizing layer on the matrix of transistors that is either porous or permissive/diffusive to oxygen at temperatures below approximately 200° C., and fabricating a matrix of passivated a-Si photodiodes over the matrix of transistors and electrically connected one each photodiode to each of the transistors. A continuous path is provided through the planarizing layer from the exterior of the structure to each of the transistors and the structure is annealed at a temperature below 200° C. in an oxygen ambient to move oxygen from the oxygen ambient to an active layer of each of the transistors and repair loss of oxygen damage to the transistors caused by the fabrication of the passivated a-Si photodiodes.

公开(公告)号：US09562242B2

公开(公告)日：2017-02-07

申请号：US14344608

申请日：2012-09-13

Applicant: Min Jiang ,  Min Zhang ,  Jiangfeng Ma ,  Hao Wu ,  Liya Liang ,  Rongming Liu ,  Guangming Wang ,  Ping Wei

Inventor： Min Jiang ,  Min Zhang ,  Jiangfeng Ma ,  Hao Wu ,  Liya Liang ,  Rongming Liu ,  Guangming Wang ,  Ping Wei

IPC: C12P7/46 ,  C07C51/41 ,  C07C51/43 ,  C07C51/44

CPC classification number: C12P7/46 ,  C07C51/412 ,  C07C51/43 ,  C07C51/44 ,  C07C55/10

Abstract: This invention belongs to the field of biochemical engineering and relates to a method of cyclic utilization of water during separation of succinic acid made by fermentation. This invention uses water from separation process for aerobic growth of E. coli AFP111 and production of succinic acid by anaerobic fermentation, obtaining final succinic acid concentration of 55 g/L and yield of 91.6%. Compared with results of fermentation using culture medium prepared from tap water, succinic acid concentration and productivity increased by 8.5% and 8.46%, respectively. An outstanding advantage of this invention is recovery and utilization of evaporated water during separation of succinic acid, realizing cyclic use of water during industrial production of succinic acid, which is an environment-friendly process. Also, as evaporated water generated during separation of succinic acid contains small amount of organic acids such as acetic acid and formic acid, if this water is used for aerobic growth of thalli, the small amount of organic acids contained therein can be used as gluconeogenesis carbon source, improving activity of some key enzymes in cell and favoring succinic acid production by anaerobic fermentation of thalli.

Abstract translation: 本发明属于生物化学工程领域，涉及通过发酵制备的琥珀酸分离期间循环利用水的方法。 本发明利用分离过程中的水分进行大肠杆菌AFP111的有氧生长，通过厌氧发酵生产琥珀酸，得到最终琥珀酸浓度为55g / L，产率为91.6％。 与使用自来水制备的培养基的发酵结果相比，琥珀酸浓度和产率分别提高了8.5％和8.46％。 本发明的突出优点是分离琥珀酸期间蒸发水的回收利用，在工业生产琥珀酸期间循环使用水，这是一个环保的工艺。 另外，由于琥珀酸分离过程中产生的蒸发水含有少量的有机酸如乙酸和甲酸，所以如果这种水用于铊的有氧生长，其中所含的少量有机酸可用作糖异生碳 来源，改善细胞中一些关键酶的活性，并通过thalli的厌氧发酵有利于琥珀酸生产。

公开(公告)号：US20150263078A1

公开(公告)日：2015-09-17

申请号：US14216920

申请日：2014-03-17

Applicant: Chan-Long Shieh ,  Fatt Foong ,  Gang Yu ,  Guangming Wang

Inventor： Chan-Long Shieh ,  Fatt Foong ,  Gang Yu ,  Guangming Wang

IPC: H01L27/32 ,  H01L51/52 ,  H01L29/786 ,  H01L51/56 ,  H01L51/00 ,  H01L27/12

CPC classification number: H01L27/3244 ,  H01L27/1259 ,  H01L27/322 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5246 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5338

Abstract: A process of fabricating a flexible TFT back-panel on a glass support includes a step of providing a flat glass support member sufficiently thick to prevent bending during the processing. A layer of etch stop material is positioned on the upper surface of the glass support member and an insulating buffer layer is positioned on the layer of etch stop material. A TFT back-panel is positioned on the insulating buffer layer and a flexible plastic carrier is affixed to the TFT back-panel. The glass support member is etched away, whereby a flexible TFT back-panel is provided. The TFT back-panel can include a matrix of either OLED cells or LCD cells.

Abstract translation: 在玻璃支架上制造柔性TFT背板的工艺包括提供足够厚的平板玻璃支撑件以防止加工过程中弯曲的步骤。 一层蚀刻停止材料定位在玻璃支撑构件的上表面上，并且绝缘缓冲层位于蚀刻停止材料层上。 TFT背板位于绝缘缓冲层上，柔性塑料载体固定在TFT后面板上。 蚀刻玻璃支撑构件，由此提供柔性TFT背面板。 TFT背面板可以包括OLED单元或LCD单元的矩阵。

公开(公告)号：US09947704B1

公开(公告)日：2018-04-17

申请号：US15296586

申请日：2016-10-18

Applicant: Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

Inventor： Chan-Long Shieh ,  Gang Yu ,  Guangming Wang

IPC: H01L27/146

CPC classification number: H01L27/14616 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14689 ,  H01L27/1469 ,  H01L27/14692

Abstract: A method of fabricating a structure including a high mobility backplane and a-Si photodiode imager includes forming a matrix of metal oxide thin film transistors on the surface of a rigid support member, depositing a planarizing layer on the matrix of transistors that is either porous or permissive/diffusive to oxygen at temperatures below approximately 200° C., and fabricating a matrix of passivated a-Si photodiodes over the matrix of transistors and electrically connected one each photodiode to each of the transistors. A continuous path is provided through the planarizing layer from the exterior of the structure to each of the transistors and the structure is annealed at a temperature below 200° C. in an oxygen ambient to move oxygen from the oxygen ambient to an active layer of each of the transistors and repair loss of oxygen damage to the transistors caused by the fabrication of the passivated a-Si photodiodes.

公开(公告)号：US09240437B2

公开(公告)日：2016-01-19

申请号：US14216920

申请日：2014-03-17

Applicant: Chan-Long Shieh ,  Fatt Foong ,  Gang Yu ,  Guangming Wang

Inventor： Chan-Long Shieh ,  Fatt Foong ,  Gang Yu ,  Guangming Wang

IPC: H01L21/84 ,  H01L27/32 ,  H01L51/00 ,  H01L27/12 ,  H01L29/786 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L27/3244 ,  H01L27/1259 ,  H01L27/322 ,  H01L29/78603 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5246 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5338

Abstract: A process of fabricating a flexible TFT back-panel on a glass support includes a step of providing a flat glass support member sufficiently thick to prevent bending during the processing. A layer of etch stop material is positioned on the upper surface of the glass support member and an insulating buffer layer is positioned on the layer of etch stop material. A TFT back-panel is positioned on the insulating buffer layer and a flexible plastic carrier is affixed to the TFT back-panel. The glass support member is etched away, whereby a flexible TFT back-panel is provided. The TFT back-panel can include a matrix of either OLED cells or LCD cells.

Abstract translation: 在玻璃支架上制造柔性TFT背板的工艺包括提供足够厚的平板玻璃支撑件以防止加工过程中弯曲的步骤。 一层蚀刻停止材料定位在玻璃支撑构件的上表面上，并且绝缘缓冲层位于蚀刻停止材料层上。 TFT背板位于绝缘缓冲层上，柔性塑料载体固定在TFT后面板上。 蚀刻玻璃支撑构件，由此提供柔性TFT背面板。 TFT背面板可以包括OLED单元或LCD单元的矩阵。

公开(公告)号：US07531835B2

公开(公告)日：2009-05-12

申请号：US11284797

申请日：2005-11-21

Applicant: Alan J. Heeger ,  Daniel Moses ,  Guangming Wang ,  James S. Swensen

Inventor： Alan J. Heeger ,  Daniel Moses ,  Guangming Wang ,  James S. Swensen

IPC: H01L35/24 ,  H01L51/00

CPC classification number: H01L51/0545 ,  H01L51/0003 ,  H01L51/0036

Abstract: Organic FETs are produced having high mobilities in the accumulation mode and in the depletion mode. Significantly higher mobility is obtained from FETs in which RR-P3HT film is applied by dip-coating to a thickness of only about 20 Å to 1 μm. It was found that the structural order of the semiconducting polymer at the interface between the semiconducting polymer and the SiO2 gate-insulator is important for achieving high carrier mobility. Heat-treatment under an inert atmosphere also was found to increase the on/off ratio of the FET.

Abstract translation: 在累积模式和耗尽模式中产生具有高迁移率的有机FET。 从通过浸涂施加RR-P3HT膜到只有大约至1um的厚度的FET获得显着更高的迁移率。 已经发现半导体聚合物在半导体聚合物和SiO 2栅绝缘体之间的界面处的结构顺序对于实现高载流子迁移率是重要的。 发现在惰性气氛下的热处理也增加了FET的导通/截止比。