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发明授权
US07531881B2 Semiconductor devices having transistors with different gate structures and methods of fabricating the same 有权
具有不同栅极结构的晶体管的半导体器件及其制造方法

Semiconductor devices having transistors with different gate structures and methods of fabricating the same
摘要：
A semiconductor device has two transistors of different structure from each other. One of transistors is P-type and the other is N-type. One of the transistors includes a gate structure in which a polysilicon layer contacts a gate insulation film while the other transistor includes a gate structure in which a metal layer contacts a gate insulation film.
摘要（中）：

半导体器件具有彼此不同结构的两个晶体管。 晶体管中的一个是P型，另一个是N型。 一个晶体管包括其中多晶硅层接触栅极绝缘膜的栅极结构，而另一个晶体管包括其中金属层与栅极绝缘膜接触的栅极结构。

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