发明授权
- 专利标题： Magnetic memory device and method for fabricating the same
- 专利标题（中）： 磁存储器件及其制造方法
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申请号： US11528367申请日： 2006-09-28
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公开(公告)号： US07535755B2公开(公告)日： 2009-05-19
- 发明人: Shinjiro Umehara , Hiroshi Ashida , Takao Ochiai , Masashige Sato , Kazuo Kobayashi
- 申请人： Shinjiro Umehara , Hiroshi Ashida , Takao Ochiai , Masashige Sato , Kazuo Kobayashi
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Fujitsu Patent Center
- 优先权： JP2006-093404 20060330
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
The magnetic memory device includes a magnetic shield film 48, and a magnetoresistive effect element 62 formed over the magnetic shield film 48 and including a magnetic layer 52, a non-magnetic layer 54 and a magnetic layer 56, in which a magnetization direction of the first magnetic layer or the second magnetic layer is reversed by spin injection, and a second magnetic shield film 68 formed over the side wall of the magnetoresistive effect element 62. Thus, the arrival of the leakage magnetic field from the interconnection near the magnetoresistive effect element 62 can be effectively prevented.