发明授权
- 专利标题： Photoresist composition for deep UV and process thereof
- 专利标题（中）： 用于深紫外线的光致抗蚀剂组合物及其工艺
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申请号： US10994745申请日： 2004-11-22
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公开(公告)号： US07537879B2公开(公告)日： 2009-05-26
- 发明人: Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
- 申请人： Francis M. Houlihan , Ralph R. Dammel , Andrew R. Romano , Munirathna Padmanaban , M. Dalil Rahman
- 申请人地址： US NJ Somerville
- 专利权人： AZ Electronic Materials USA Corp.
- 当前专利权人： AZ Electronic Materials USA Corp.
- 当前专利权人地址： US NJ Somerville
- 代理商 Sangya Jain
- 主分类号： G03F7/039
- IPC分类号： G03F7/039 ; G03F7/20 ; G03F7/30 ; G03F7/38 ; G03C1/73
摘要：
The present invention relates to a novel chemically amplified photoresist, which is sensitive to wavelengths between 300 nm and 100 nm, and comprises a) a novel polymer comprising a sulfone group pendant from a polymer backbone that is insoluble in an aqueous alkaline solution and comprises at least one acidic moiety protected with acid labile group, and b) a compound capable of producing an acid upon irradiation. The invention also relates to a process of imaging the novel positive photoresist composition.
公开/授权文献
- US20060110677A1 Photoresist composition for deep UV and process thereof 公开/授权日：2006-05-25
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