发明授权
- 专利标题： Method of manufacturing nano size-gap electrode device
- 专利标题（中）： 制造纳米尺寸间隙电极器件的方法
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申请号： US11447820申请日： 2006-06-06
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公开(公告)号： US07537883B2公开(公告)日： 2009-05-26
- 发明人: Han Young Yu , In Bok Baek , Chang Geun Ahn , Ki Ju Im , Jong Heon Yang , Ung Hwan Pi , Min Ki Ryu , Chan Woo Park , Sung Yool Choi , Seong Jae Lee
- 申请人： Han Young Yu , In Bok Baek , Chang Geun Ahn , Ki Ju Im , Jong Heon Yang , Ung Hwan Pi , Min Ki Ryu , Chan Woo Park , Sung Yool Choi , Seong Jae Lee
- 申请人地址： KR Daejeon
- 专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人： Electronics and Telecommunications Research Institute
- 当前专利权人地址： KR Daejeon
- 代理机构： Ladas & Parry LLP
- 优先权： KR10-2005-0091288 20050929
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; H01L51/40 ; C25D5/18
摘要：
Provided is a method of manufacturing a nano size-gap electrode device. The method includes the steps of: disposing a floated nano structure on a semiconductor layer; forming a mask layer having at least one opening pattern to intersect the nano structure; and depositing a metal on the semiconductor layer exposed through the opening pattern to form an electrode, such that a nano size-gap is provided under the nano structure by the nano structure.
公开/授权文献
- US20070072336A1 Method of manufacturing nano size-gap electrode device 公开/授权日：2007-03-29
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