发明授权
- 专利标题: Sputtering target for forming thin phosphor film
- 专利标题(中): 用于形成薄荧光膜的溅射靶
-
申请号: US10548476申请日: 2004-03-05
-
公开(公告)号: US07540976B2公开(公告)日: 2009-06-02
- 发明人: Yoshihiko Yano , Tomoyuki Oike , Naruki Kataoka , Masaki Takahashi , Yukio Kawaguchi
- 申请人: Yoshihiko Yano , Tomoyuki Oike , Naruki Kataoka , Masaki Takahashi , Yukio Kawaguchi
- 申请人地址: CA
- 专利权人: Ifire IP Corporation
- 当前专利权人: Ifire IP Corporation
- 当前专利权人地址: CA
- 代理机构: Ostrolenk, Faber, Gerb & Soffen, LLP
- 优先权: JP2003-060601 20030306
- 国际申请: PCT/JP2004/002803 WO 20040305
- 国际公布: WO2004/080128 WO 20040916
- 主分类号: C09K11/02
- IPC分类号: C09K11/02 ; C09K11/77 ; C09K11/56 ; C09K11/54 ; C09K11/72 ; C23C14/00 ; C25B11/00 ; C25B13/00 ; B32B9/00 ; B32B19/00 ; C04B14/00 ; C09C1/04
摘要:
A sputtering target for fluorescent thin-film formation comprising a matrix material and a luminescent center material,wherein said matrix material has a chemical composition represented by the following formula (1), and simultaneously satisfies conditions represented by the following inequalities (2) to (5). MIIvAxByOzSw (1) 0.05≦v/x≦5 (2) 1≦y/x≦6 (3) 0.01≦z/(z+w)≦0.85 (4) 0.6≦(v+x+3y/2)/(z+w)≦1.5 (5) wherein MII represents one or more elements selected from the group consisting of Zn, Cd and Hg, A represents one or more elements selected from the group consisting of Mg, Ca, Sr, Ba and rare earth elements, B represents one or more elements selected from the group consisting of Al, Ga and In, and v, x, y, z and w each represent numerical values satisfying the conditions specified in the inequalities (2) to (5).
公开/授权文献
- US20060254462A1 Sputtering target for forming thin phosphor film 公开/授权日:2006-11-16
信息查询