Invention Grant
- Patent Title: Semiconductor device having a trench gate and method of fabricating the same
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Application No.: US11491704Application Date: 2006-07-24
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Publication No.: US07541244B2Publication Date: 2009-06-02
- Inventor: Jeng-Ping Lin , Pei-Ing Lee
- Applicant: Jeng-Ping Lin , Pei-Ing Lee
- Applicant Address: TW Taoyuan
- Assignee: Nanya Technology Corporation
- Current Assignee: Nanya Technology Corporation
- Current Assignee Address: TW Taoyuan
- Agency: Quintero Law Office
- Priority: TW94145039A 20051219
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A method of fabricating a semiconductor device having a trench gate is provided. First, a semiconductor substrate having a trench etch mask thereon is provided. The semiconductor substrate is etched to form a first trench having a first depth using the trench etch mask as a shield. Impurities are doped into the semiconductor substrate through the first trench to form a doped region. The doped region and the semiconductor substrate underlying the first trench are etched to form a second trench having a second depth greater than the first depth, wherein the second trench has a sidewall and a bottom. A gate insulating layer is formed on the sidewall and the bottom of the second trench. A trench gate is formed in the second trench.
Public/Granted literature
- US20070138545A1 Semiconductor device having a trench gate and method of fabricating the same Public/Granted day:2007-06-21
Information query
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