Invention Grant
- Patent Title: Reversed T-shaped finfet
- Patent Title (中): 反转T形finfet
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Application No.: US11765611Application Date: 2007-06-20
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Publication No.: US07541267B1Publication Date: 2009-06-02
- Inventor: Haihong Wang , Shibly S. Ahmed , Ming-Ren Lin , Bin Yu
- Applicant: Haihong Wang , Shibly S. Ahmed , Ming-Ren Lin , Bin Yu
- Applicant Address: US CA Sunnyvale
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: H01L21/28
- IPC: H01L21/28
Abstract:
A method includes forming a first rectangular mesa from a layer of semiconducting material and forming a first dielectric layer around the first mesa. The method further includes forming a first rectangular mask over a first portion of the first mesa leaving an exposed second portion of the first mesa and etching the exposed second portion of the first mesa to produce a reversed T-shaped fin from the first mesa.
Information query
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