发明授权
- 专利标题: Magnetic storage device using ferromagnetic tunnel junction element
- 专利标题(中): 使用铁磁隧道结元件的磁存储装置
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申请号: US10530271申请日: 2003-09-18
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公开(公告)号: US07542335B2公开(公告)日: 2009-06-02
- 发明人: Hiroshi Yoshihara , Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
- 申请人: Hiroshi Yoshihara , Katsutoshi Moriyama , Hironobu Mori , Nobumichi Okazaki
- 申请人地址: JP Tokyo
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Sonnenschein Nath & Rosenthal LLP
- 优先权: JP2002-294356 20021008
- 国际申请: PCT/JP03/11939 WO 20030918
- 国际公布: WO2004/034469 WO 20040422
- 主分类号: G11C11/14
- IPC分类号: G11C11/14
摘要:
It is a task to provide a magnetic storage device of complementary type, of which reliability is improved by precisely performing writing storage data.In the present invention, therefore, in a magnetic storage device of complementary type for storing storage data contrary to each other in a first ferromagnetic tunnel junction element and a second ferromagnetic tunnel junction element, respectively, the first ferromagnetic tunnel junction element and the second ferromagnetic tunnel junction element are formed adjacently on a semiconductor substrate, first writing lines is wound around the first ferromagnetic tunnel junction element like a coil and the same time second writing lines is wound around the second ferromagnetic tunnel junction element like a coil, and in addition, a winding direction of the first writing lines and a winding direction of the second writing lines are reversed to each other.
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