发明授权
- 专利标题: Method for manufacturing a capacitor electrode structure
- 专利标题(中): 电容器电极结构的制造方法
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申请号: US11489052申请日: 2006-07-19
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公开(公告)号: US07544562B2公开(公告)日: 2009-06-09
- 发明人: Peter Moll , Odo Wunnicke
- 申请人: Peter Moll , Odo Wunnicke
- 申请人地址: DE Munich
- 专利权人: Qimonda AG
- 当前专利权人: Qimonda AG
- 当前专利权人地址: DE Munich
- 代理机构: Eschweiler & Associates LLC
- 优先权: DE102006031324 20060706
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/8244 ; H01L21/8242
摘要:
A method for manufacturing a capacitor electrode structure, according to which the following steps are executed: A substrate is provided, which comprises contact pads arranged in lines and rows on a surface of the substrate. The lines are non-parallel to the rows. A first mold is applied on the substrate. At least one first trench is formed into the first mold above the contact pads. The first trench spans over at least two contact pads arranged in one row. A first dielectric layer is applied on side walls of the at least one first trench for forming first supporting walls. A second mold is applied on the substrate. At least one second trench is formed into the second mold above the contact pads. The second trench spans over at least two contact pads arranged in one line. A second dielectric layer is applied on side walls of the at least one second trench for forming second supporting walls. And a conductive layer is applied on the first and second supporting walls for forming a first electrode of the capacitor structure.
公开/授权文献
- US20080006863A1 Method for manufacturing a capacitor electrode structure 公开/授权日:2008-01-10