Invention Grant
- Patent Title: Active matrix type semicondcutor display device
- Patent Title (中): 主动矩阵型半指示器显示装置
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Application No.: US11715938Application Date: 2007-03-09
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Publication No.: US07544981B2Publication Date: 2009-06-09
- Inventor: Yukio Tanaka , Shou Nagao
- Applicant: Yukio Tanaka , Shou Nagao
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP10-326470 19981117; JP11-086202 19990329
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119

Abstract:
There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present invention, a counter electrode is divided into two, different potentials are applied to the two counter electrodes, respectively and inversion driving is carried out each other. Since a potential of an image signal can be made low by doing so, it is possible to lower a voltage necessary for operation of a driver circuit. As a result, it is possible to realize improvement of reliability of an element such as a TFT and reduction of consumed electric power. Moreover, since it is possible to lower a voltage of a timing pulse supplied by the driver circuit, a booster circuit can be omitted, and reduction of an area of the driver circuit can be realized.
Public/Granted literature
- US20070166860A1 Active matrix type semicondcutor display device Public/Granted day:2007-07-19
Information query
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