发明授权
- 专利标题： Reverse-biased PN diode decoupling capacitor
- 专利标题（中）： 反向偏置PN二极管去耦电容
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申请号： US11502094申请日： 2006-08-10
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公开(公告)号： US07550820B2公开(公告)日： 2009-06-23
- 发明人: Hsien-Te Chen , Jen-Hang Yang , Chun-Hui Tai
- 申请人： Hsien-Te Chen , Jen-Hang Yang , Chun-Hui Tai
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： K & L Gates LLP
- 主分类号： H01L29/93
- IPC分类号： H01L29/93
摘要：
This invention discloses a decoupling capacitor in an integrated circuit, comprising a plurality of dedicated PN diodes with a total junction area greater than one tenth of a total active area of functional devices for which the dedicated PN diodes are intended to protect, a N-type region of the dedicated PN diodes coupling to a positive supply voltage (Vdd), and a P-type region of the dedicated PN diodes coupling to a complimentary lower supply voltage (Vss), wherein the dedicated PN diodes are reversely biased.
公开/授权文献
- US20080122036A1 Reverse-biased PN diode decoupling capacitor 公开/授权日：2008-05-29
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