发明授权
US07557028B1 Process for group III-V semiconductor nanostructure synthesis and compositions made using same
有权
III-V族半导体纳米结构合成方法及使用该组合物制备的组合物
- 专利标题： Process for group III-V semiconductor nanostructure synthesis and compositions made using same
- 专利标题（中）： III-V族半导体纳米结构合成方法及使用该组合物制备的组合物
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申请号： US11178257申请日： 2005-07-08
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公开(公告)号： US07557028B1公开(公告)日： 2009-07-07
- 发明人: Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
- 申请人： Erik C. Scher , Mihai A. Buretea , William P. Freeman , Joel Gamoras , Baixin Qian , Jeffery A. Whiteford
- 申请人地址： US CA Palo Alto
- 专利权人： Nanosys, Inc.
- 当前专利权人： Nanosys, Inc.
- 当前专利权人地址： US CA Palo Alto
- 代理商 Andrew L. Filler
- 主分类号： H01L21/28
- IPC分类号： H01L21/28
摘要：
Methods for producing nanostructures, particularly Group III-V semiconductor nanostructures, are provided. The methods include use of novel Group III and/or Group V precursors, novel surfactants, oxide acceptors, high temperature, and/or stable co-products. Related compositions are also described. Methods and compositions for producing Group III inorganic compounds that can be used as precursors for nanostructure synthesis are provided. Methods for increasing the yield of nanostructures from a synthesis reaction by removal of a vaporous by-product are also described.
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