Invention Grant
- Patent Title: Integrated circuit capacitor structure
- Patent Title (中): 集成电路电容器结构
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Application No.: US11733711Application Date: 2007-04-10
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Publication No.: US07560332B2Publication Date: 2009-07-14
- Inventor: Kyoung-Woo Lee , Wan-Jae Park , Jeong-Hoon Ahn , Kyung-Tae Lee , Mu-Kyeng Jung , Yong-Jun Lee , Il-Goo Kim , Soo-Geun Lee
- Applicant: Kyoung-Woo Lee , Wan-Jae Park , Jeong-Hoon Ahn , Kyung-Tae Lee , Mu-Kyeng Jung , Yong-Jun Lee , Il-Goo Kim , Soo-Geun Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Marger Johnson & McCollom, P.C.
- Priority: KR2002-63477 20021017; KR2003-3296 20030117
- Main IPC: H01L21/8234
- IPC: H01L21/8234

Abstract:
Embodiments of the invention include a MIM capacitor that has a high capacitance that can be manufactured without the problems that affected the prior art. Such a capacitor includes an upper electrode, a lower electrode, and a dielectric layer that is intermediate the upper and the lower electrodes. A first voltage can be applied to the upper electrode and a second voltage, which is different from the first voltage, can be applied to the lower electrode. A wire layer, through which the first voltage is applied to the upper electrode, is located in the same level as or in a lower level than the lower electrode.
Public/Granted literature
- US20070184610A1 INTEGRATED CIRCUIT CAPACITOR STRUCTURE Public/Granted day:2007-08-09
Information query
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