发明授权
- 专利标题： Self-aligned pitch reduction
- 专利标题（中）： 自对准螺距减小
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申请号： US11291303申请日： 2005-11-30
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公开(公告)号： US07560388B2公开(公告)日： 2009-07-14
- 发明人: Jisoo Kim , Sangheon Lee , Daehan Choi , S. M. Reza Sadjadi
- 申请人： Jisoo Kim , Sangheon Lee , Daehan Choi , S. M. Reza Sadjadi
- 申请人地址： US CA Fremont
- 专利权人： Lam Research Corporation
- 当前专利权人： Lam Research Corporation
- 当前专利权人地址： US CA Fremont
- 代理机构： Beyer Law Group LLP
- 主分类号： H01L21/311
- IPC分类号： H01L21/311
摘要：
A method providing features in a dielectric layer is provided. A sacrificial layer is formed over the dielectric layer. A set of sacrificial layer features is etched into the sacrificial layer. A first set of dielectric layer features is etched into the dielectric layer through the sacrificial layer. The first set of dielectric layer features and the set of sacrificial layer features are filled with a filler material. The sacrificial layer is removed. The widths of the spaces between the parts of the filler material are shrunk with a shrink sidewall deposition. A second set of dielectric layer features is etched into the dielectric layer through the shrink sidewall deposition. The filler material and shrink sidewall deposition are removed.
公开/授权文献
- US20070123053A1 Self-aligned pitch reduction 公开/授权日：2007-05-31
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