Invention Grant
- Patent Title: CMOS image sensor and method for manufacturing the same
- Patent Title (中): CMOS图像传感器及其制造方法
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Application No.: US11486489Application Date: 2006-07-13
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Publication No.: US07560674B2Publication Date: 2009-07-14
- Inventor: Chang Hun Han
- Applicant: Chang Hun Han
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Offices of Andrew D. Fortney
- Agent Andrew D. Fortney
- Priority: KR10-2005-0064255 20050715
- Main IPC: H01L27/00
- IPC: H01L27/00

Abstract:
Disclosed are a CMOS image sensor and a manufacturing method thereof. The present CMOS image sensor comprises: first, second, and third photo diodes and a plurality of transistors spaced at a predetermined distance in a semiconductor substrate; a diffusion blocking layer on substantially an entire surface of the substrate, including an opening therein exposing at least one of the photo diodes; an interlevel dielectric layer over the entire surface of the substrate, covering the diffusion blocking layer; first, second and third color filter layers over the interlevel dielectric layer, respectively corresponding to the first, second and third photo diodes, and a plurality of microlenses over the color filter layers, corresponding to each color filter layer.
Public/Granted literature
- US20070012863A1 CMOS image sensor and method for manufacturing the same Public/Granted day:2007-01-18
Information query
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