发明授权
US07560692B2 Method of TEM sample preparation for electron holography for semiconductor devices
失效
半导体器件电子全息术的TEM样品制备方法
- 专利标题: Method of TEM sample preparation for electron holography for semiconductor devices
- 专利标题(中): 半导体器件电子全息术的TEM样品制备方法
-
申请号: US11617386申请日: 2006-12-28
-
公开(公告)号: US07560692B2公开(公告)日: 2009-07-14
- 发明人: Keith E. Barton , Steven H. Boettcher , John G. Gaudiello , Leon J. Kimball , Yun-Yu Wang
- 申请人: Keith E. Barton , Steven H. Boettcher , John G. Gaudiello , Leon J. Kimball , Yun-Yu Wang
- 申请人地址: US NY Armonk KR
- 专利权人: International Business Machines Corporation,Dongbu Electronics Co., Ltd.
- 当前专利权人: International Business Machines Corporation,Dongbu Electronics Co., Ltd.
- 当前专利权人地址: US NY Armonk KR
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Steven Capella, Esq.
- 主分类号: G01N1/32
- IPC分类号: G01N1/32 ; G01N23/04
摘要:
A high quality electron microscopy sample suitable for electron holography is prepared by forming markers filled with TEOS oxide and by repeatedly applying multiple coats of an adhesive followed by a relatively low temperature cure after each application. The TEOS oxide marker is readily visible during the polish, has a similar polish rate as a semiconductor material, and reduces contamination during sample preparation. The repeated application of adhesives separated by relatively low temperature cures increases the adhesive strength of the adhesive material to the semiconductor material without making it too brittle. This results in an improved control and yield of the sample preparation process.