- 专利标题: Magnetoresistance effect element, magnetic head and magnetic recording and/or reproducing system
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申请号: US12212162申请日: 2008-09-17
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公开(公告)号: US07561383B2公开(公告)日: 2009-07-14
- 发明人: Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
- 申请人: Yuuzo Kamiguchi , Hiromi Yuasa , Tomohiko Nagata , Hiroaki Yoda , Katsuhiko Koui , Masatoshi Yoshikawa , Hitoshi Iwasaki , Masashi Sahashi , Masayuki Takagishi
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2000-321171 20001020
- 主分类号: G11B5/127
- IPC分类号: G11B5/127
摘要:
There is provided a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers to be controlled, and a magnetic head and magnetic recording and/or reproducing system using the same. In a magnetoresistance effect element wherein a sense current is caused to flow in a direction perpendicular to the plane of the film, a resistance regulating layer is provided in at least one of a pinned layer, a free layer and an non-magnetic intermediate layer. The resistance regulating layer contains, as a principal component, an oxide, a nitride, a fluoride, a carbide or a boride. The resistance regulating layer may be a continuous film or may have pin holes. Thus, it is possible to provide a practical magnetoresistance effect element which has an appropriate value of resistance, which can be sensitized and which has a small number of magnetic layers, while effectively utilizing the scattering effect depending on spin.
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