发明授权
US07563636B2 Method of forming a pixel sensor cell for collecting electrons and holes
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形成用于收集电子和空穴的像素传感器单元的方法
- 专利标题: Method of forming a pixel sensor cell for collecting electrons and holes
- 专利标题(中): 形成用于收集电子和空穴的像素传感器单元的方法
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申请号: US12172304申请日: 2008-07-14
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公开(公告)号: US07563636B2公开(公告)日: 2009-07-21
- 发明人: James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
- 申请人: James W. Adkisson , Andres Bryant , John J. Ellis-Monaghan , Mark D. Jaffe , Jeffrey B. Johnson , Alain Loiseau
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理商 Anthony J. Canale
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
The present invention is a pixel sensor cell and method of making the same. The pixel sensor cell approximately doubles the available signal for a given quanta of light. The device of the present invention utilizes the holes produced by impinging photons in a pixel sensor cell circuit. A pixel sensor cell having reduced complexity includes an n-type collection well region formed beneath a surface of a substrate for collecting electrons generated by electromagnetic radiation impinging on the pixel sensor cell and a p-type collection well region formed beneath the surface of the substrate for collecting holes generated by the impinging photons. A circuit structure having a first input is coupled to the n-type collection well region and a second input is coupled to the p-type collection well region, wherein an output signal of the pixel sensor cell is the magnitude of the difference of a signal of the first input and a signal of the second input.
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