发明授权
- 专利标题： Semiconductor structures including vertical diode structures and methods of making the same
- 专利标题（中）： 包括垂直二极管结构的半导体结构及其制造方法
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申请号： US11869012申请日： 2007-10-09
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公开(公告)号： US07563666B2公开(公告)日： 2009-07-21
- 发明人: Fernando Gonzalez , Tyler A. Lowrey , Trung Tri Doan , Raymond A. Turi , Graham R. Wolstenholme
- 申请人： Fernando Gonzalez , Tyler A. Lowrey , Trung Tri Doan , Raymond A. Turi , Graham R. Wolstenholme
- 申请人地址： US ID Boise
- 专利权人： Micron Technology, Inc.
- 当前专利权人： Micron Technology, Inc.
- 当前专利权人地址： US ID Boise
- 代理机构： TraskBritt
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234
摘要：
Semiconductor structures and methods of making a vertical diode structure are provided. The vertical diode structure may have associated therewith a diode opening extending through an insulation layer and contacting an active region on a silicon wafer. A titanium silicide layer may be formed over the interior surface of the diode opening and contacting the active region. The diode opening may initially be filled with an amorphous silicon plug that is doped during deposition and subsequently recrystallized to form large grain polysilicon. The silicon plug has a top portion that may be heavily doped with a first type dopant and a bottom portion that may be lightly doped with a second type dopant. The top portion may be bounded by the bottom portion so as not to contact the titanium silicide layer. In one embodiment of the vertical diode structure, a programmable resistor contacts the top portion of the silicon plug and a metal line contacts the programmable resistor.
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