Disclosed is a method for fabricating a gate of a field effect transistor. The method comprises a) forming a field oxide layer on a silicon substrate and then applying a photoresist layer in order to define a gate, b) etching the silicon substrate using the photoresist layer as a mask, c) sequentially depositing a gate oxide layer and a gate polysilicon layer on an entire surface of the silicon substrate and defining the gate using the photoresist layer, d) etching the resulting silicon substrate using the photoresist layer as a mask to form the gate and forming an N− ion region by means of ion implantation, and e) depositing and etching back an oxide layer to form a sidewall oxide layer and forming an N+ ion region by means of ion implantation. Consequently, the gate is made by etching the silicon substrate. Thus, a length of the gate is reduced, so that it is possible not only to make a cell area smaller but also to prevent a short-channel effect.