发明授权
US07563704B2 Method of forming an interconnect including a dielectric cap having a tensile stress
有权
形成包括具有拉伸应力的电介质盖的互连的方法
- 专利标题： Method of forming an interconnect including a dielectric cap having a tensile stress
- 专利标题（中）： 形成包括具有拉伸应力的电介质盖的互连的方法
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申请号： US11162666申请日： 2005-09-19
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公开(公告)号： US07563704B2公开(公告)日： 2009-07-21
- 发明人: Chih-Chao Yang , Kaushik Chanda , Lawrence A. Clevenger , Yun-Yu Wang , Daewon Yang
- 申请人： Chih-Chao Yang , Kaushik Chanda , Lawrence A. Clevenger , Yun-Yu Wang , Daewon Yang
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理商 H. Daniel Schnurmann
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/44
摘要：
An interconnect structure and method of making the same are provided. The interconnect structure includes a dielectric layer having a patterned opening, a metal feature disposed in the patterned opening, and a dielectric cap overlying the metal feature. The dielectric cap has an internal tensile stress, the stress helping to avoid electromigration from occurring in a direction away from the metal line, especially when the metal line has tensile stress.
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