发明授权
- 专利标题: Plasma processing apparatus
- 专利标题(中): 等离子体处理装置
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申请号: US10953539申请日: 2004-09-30
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公开(公告)号: US07565879B2公开(公告)日: 2009-07-28
- 发明人: Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
- 申请人: Saburo Kanai , Kazue Takahashi , Kouichi Okamura , Ryoji Hamasaki , Satoshi Ito
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd
- 当前专利权人: Hitachi, Ltd
- 当前专利权人地址: JP Tokyo
- 代理机构: Antonelli, Terry, Stout & Kraus, LLP.
- 主分类号: C23C16/511
- IPC分类号: C23C16/511 ; C23C16/52 ; C23C16/22 ; C23C16/06
摘要:
A plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable, arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature monitoring unit monitors temperature of the inner cylinder, and a controller controls temperature of the outer cylinder. A desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder, and the controller controls the temperature of the outer cylinder in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.
公开/授权文献
- US20050064717A1 Plasma processing apparatus 公开/授权日:2005-03-24
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