发明授权
- 专利标题： Method of forming a wall structure in a microelectronic assembly
- 专利标题（中）： 在微电子组件中形成壁结构的方法
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申请号： US11600289申请日： 2006-11-15
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公开(公告)号： US07569424B2公开(公告)日： 2009-08-04
- 发明人: Michael J. Nystrom , Christopher Paul Wade , Giles Humpston
- 申请人： Michael J. Nystrom , Christopher Paul Wade , Giles Humpston
- 申请人地址： US CA San Jose
- 专利权人： Tessera, Inc.
- 当前专利权人： Tessera, Inc.
- 当前专利权人地址： US CA San Jose
- 代理机构： Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- 主分类号： H01L21/50
- IPC分类号： H01L21/50 ; H01L21/48 ; H01L21/44
摘要：
A method of forming a wall structure in a microelectronic assembly includes selectively depositing a flowable material on an upper surface of a first element in the microelectronic assembly, positioning a molding surface in contact with the deposited flowable material and controlling a distance between the upper surface of the first element and the molding surface with one or more objects positioned between the upper surface and the molding surface.
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