公开(公告)号：US07569424B2

公开(公告)日：2009-08-04

申请号：US11600289

申请日：2006-11-15

申请人： Michael J. Nystrom ,  Christopher Paul Wade ,  Giles Humpston

发明人： Michael J. Nystrom ,  Christopher Paul Wade ,  Giles Humpston

IPC分类号： H01L21/50 ,  H01L21/48 ,  H01L21/44

CPC分类号： H01L27/14618 ,  B81C1/00269 ,  B81C2203/019 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a wall structure in a microelectronic assembly includes selectively depositing a flowable material on an upper surface of a first element in the microelectronic assembly, positioning a molding surface in contact with the deposited flowable material and controlling a distance between the upper surface of the first element and the molding surface with one or more objects positioned between the upper surface and the molding surface.

摘要翻译： 在微电子组件中形成壁结构的方法包括在微电子组件中的第一元件的上表面上选择性地沉积可流动材料，将模制表面定位成与沉积的可流动材料接触并且控制上表面之间的距离 第一元件和模制表面，其中一个或多个物体位于上表面和模制表面之间。

公开(公告)号：US20080156518A1

公开(公告)日：2008-07-03

申请号：US11649354

申请日：2007-01-03

申请人： Kenneth Allen Honer ,  Christopher Paul Wade ,  Seiichi Tobe ,  Chung-Chuan Tseng ,  Ellis Chau ,  Kyong-Mo Bang

发明人： Kenneth Allen Honer ,  Christopher Paul Wade ,  Seiichi Tobe ,  Chung-Chuan Tseng ,  Ellis Chau ,  Kyong-Mo Bang

IPC分类号： H05K13/00 ,  H01S4/00 ,  H05K1/00

CPC分类号： H05K3/0052 ,  H01L24/16 ,  H01L24/32 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/078 ,  H01L2924/10156 ,  H01L2924/10158 ,  H01L2924/19107 ,  H05K2203/0165 ,  H05K2203/0228 ,  H05K2203/167 ,  Y10T29/49002 ,  Y10T29/49169 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A substrate including plural microelectronic device carriers has metallic alignment elements. The alignment elements desirably are disposed in a predetermined positional relationship to terminals on the carriers. The alignment elements are engaged with a carrier frame and a cutting device is aligned with the carrier frame. The cutting device cuts the carriers so that borders of the carriers are in a precise relationship with the terminals.

摘要翻译： 包括多个微电子器件载体的衬底具有金属对准元件。 对准元件期望地与载体上的端子以预定的位置关系设置。 对准元件与载体框架接合，并且切割装置与载体框架对准。 切割装置切割载体，使得载体的边界与端子具有精确的关系。

公开(公告)号：US20100044860A1

公开(公告)日：2010-02-25

申请号：US12462208

申请日：2009-07-30

申请人： Belgacem Haba ,  Chang Myung Ryu ,  Kimitaka Endo ,  Christopher Paul Wade

发明人： Belgacem Haba ,  Chang Myung Ryu ,  Kimitaka Endo ,  Christopher Paul Wade

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L24/89 ,  H01L21/4853 ,  H01L23/49811 ,  H01L23/49816 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13609 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01327 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： An interconnection element can include a substrate, e.g., a connection substrate, element of a package, circuit panel or microelectronic substrate, e.g., semiconductor chip, the substrate having a plurality of metal conductive elements such as conductive pads, contacts, bond pads, traces, or the like exposed at the surface. A plurality of solid metal posts may overlie and project away from respective ones of the conductive elements. An intermetallic layer can be disposed between the posts and the conductive elements, such layer providing electrically conductive interconnection between the posts and the conductive elements. Bases of the posts adjacent to the intermetallic layer can be aligned with the intermetallic layer.

摘要翻译： 互连元件可以包括衬底，例如连接衬底，封装的元件，电路板或微电子衬底，例如半导体芯片，衬底具有多个金属导电元件，例如导电焊盘，触点，接合焊盘，迹线 ，或类似物暴露在表面。 多个固体金属柱可以覆盖并突出远离相应的导电元件。 金属间层可以设置在柱和导电元件之间，这种层在柱和导电元件之间提供导电互连。 与金属间化合物层相邻的柱的基底可与金属间层对准。

公开(公告)号：US20080113470A1

公开(公告)日：2008-05-15

申请号：US11600289

申请日：2006-11-15

申请人： Michael J. Nystrom ,  Christopher Paul Wade ,  Giles Humpston

发明人： Michael J. Nystrom ,  Christopher Paul Wade ,  Giles Humpston

IPC分类号： H01L21/00

CPC分类号： H01L27/14618 ,  B81C1/00269 ,  B81C2203/019 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a wall structure in a microelectronic assembly includes selectively depositing a flowable material on an upper surface of a first element in the microelectronic assembly, positioning a molding surface in contact with the deposited flowable material and controlling a distance between the upper surface of the first element and the molding surface with one or more objects positioned between the upper surface and the molding surface.

摘要翻译： 在微电子组件中形成壁结构的方法包括在微电子组件中的第一元件的上表面上选择性地沉积可流动材料，将模制表面定位成与沉积的可流动材料接触并且控制上表面之间的距离 第一元件和模制表面，其中一个或多个物体位于上表面和模制表面之间。