发明授权
- 专利标题： Multiport semiconductor memory device
- 专利标题（中）： 多端口半导体存储器件
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申请号： US12219350申请日： 2008-07-21
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公开(公告)号： US07570540B2公开(公告)日： 2009-08-04
- 发明人: Koji Nii
- 申请人： Koji Nii
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2004-316113 20041029
- 主分类号： G11C8/00
- IPC分类号： G11C8/00
摘要：
In the same row access, a voltage level of word lines WLA and WLB is set to a power supply voltage VDD-Vtp. On the other hand, in different rows access, a voltage level of word line WLA or WLB is set to power supply voltage VDD. Therefore, when both ports PA and PB simultaneously access the same row, the voltage level of word lines WLA, WLB is set to power supply voltage VDD-Vtp. Thus, a driving current amount of a memory cell is reduced, thereby preventing a reduction in a current ratio of a transistor. As a result, deterioration of SNM can be prevented.
公开/授权文献
- US20080291769A1 Multiport semiconductor memory device 公开/授权日：2008-11-27
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