Invention Grant
US07571639B2 Method of correcting opaque defect of photomask using atomic force microscope fine processing device
有权
使用原子力显微镜精细加工装置校正光掩模不透明缺陷的方法
- Patent Title: Method of correcting opaque defect of photomask using atomic force microscope fine processing device
- Patent Title (中): 使用原子力显微镜精细加工装置校正光掩模不透明缺陷的方法
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Application No.: US11796996Application Date: 2007-04-27
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Publication No.: US07571639B2Publication Date: 2009-08-11
- Inventor: Toshio Doi , Kazutoshi Watanabe , Osamu Takaoka , Atsushi Uemoto
- Applicant: Toshio Doi , Kazutoshi Watanabe , Osamu Takaoka , Atsushi Uemoto
- Applicant Address: JP Chiba
- Assignee: SII NanoTechnology Inc.
- Current Assignee: SII NanoTechnology Inc.
- Current Assignee Address: JP Chiba
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2006-124678 20060428
- Main IPC: H01J37/352
- IPC: H01J37/352

Abstract:
An opaque defect is processed by scanning with a high load or height fixed mode using a probe harder than a pattern material of a photomask at the time of going scanning, and is observed by scanning with a low load or intermittent contact mode at the time of returning scanning so as to detect an ending point of the opaque defect by the height information. When there is a portion reaching to a glass substrate as an ending point, this portion is not scanned by the high load or height fixed mode in the next processing, and only a portion not reaching to the ending point is scanned by the high load or height fixed mode.
Public/Granted literature
- US20070281222A1 Method of correcting opaque defect of photomask using atomic force microscope fine processing device Public/Granted day:2007-12-06
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