Invention Grant
- Patent Title: Deep trench formation in semiconductor device fabrication
- Patent Title (中): 半导体器件制造中的深沟槽形成
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Application No.: US11458828Application Date: 2006-07-20
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Publication No.: US07573085B2Publication Date: 2009-08-11
- Inventor: June Cline , Dinh Dang , Mark Lagerquist , Jeffrey C. Maling , Lisa Y. Ninomiya , Bruce W. Porth , Steven M. Shank , Jessica A. Trapasso
- Applicant: June Cline , Dinh Dang , Mark Lagerquist , Jeffrey C. Maling , Lisa Y. Ninomiya , Bruce W. Porth , Steven M. Shank , Jessica A. Trapasso
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent William D. Sabo
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A semiconductor structure. The structure includes (a) a semiconductor substrate; (b) a hard mask layer on top of the semiconductor substrate; and (c) a hard mask layer opening in the hard mask layer. The semiconductor substrate is exposed to the atmosphere through the hard mask layer opening. The hard mask layer opening comprises a top portion and a bottom portion, wherein the bottom portion is disposed between the top portion and the semiconductor substrate. The bottom portion has a greater lateral width than the top portion.
Public/Granted literature
- US20060275978A1 DEEP TRENCH FORMATION IN SEMICONDUCTOR DEVICE FABRICATION Public/Granted day:2006-12-07
Information query
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