发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11170316申请日： 2005-06-30
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公开(公告)号： US07573120B2公开(公告)日： 2009-08-11
- 发明人: Katsuaki Natori , Hiroyuki Kanaya , Koji Yamakawa
- 申请人： Katsuaki Natori , Hiroyuki Kanaya , Koji Yamakawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2005-132761 20050428
- 主分类号： H01L29/93
- IPC分类号： H01L29/93
摘要：
According to an aspect of the present invention, there is provided a semiconductor device comprising a semiconductor substrate, a capacitor which is disposed above the semiconductor substrate and in which a dielectric film is held between lower and upper electrodes, an oxide film formed in such a manner as to coat the capacitor and having a thickness of 5 nm or more and 50 nm or less, and a protective film formed on the oxide film by an ALD process.
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