公开(公告)号：US20050230728A1

公开(公告)日：2005-10-20

申请号：US11107890

申请日：2005-04-18

申请人： Katsuaki Natori ,  Soichi Yamazaki ,  Koji Yamakawa ,  Hiroyuki Kanaya

发明人： Katsuaki Natori ,  Soichi Yamazaki ,  Koji Yamakawa ,  Hiroyuki Kanaya

IPC分类号： H01L27/105 ,  H01L21/02 ,  H01L21/8246 ,  H01L23/522 ,  H01L27/115 ,  H01L31/113

CPC分类号： H01L27/11502 ,  H01L23/5223 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.

摘要翻译： 根据本发明的一个方面的半导体器件包括半导体衬底，铁电电容器，保护膜和辅助电容器。 铁电电容器设置在半导体衬底上方，并且包括插入在上电极和下电极之间的上电极，下电极和铁电体膜。 形成保护膜，覆盖铁电电容器。 辅助电容器设置在铁电电容器外围的电路部分中，并且使用保护膜作为电容器绝缘膜。

公开(公告)号：US20050181559A1

公开(公告)日：2005-08-18

申请号：US10878051

申请日：2004-06-29

申请人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

发明人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

IPC分类号： H01L21/28 ,  H01L21/02 ,  H01L21/20 ,  H01L21/326 ,  H01L21/336 ,  H01L21/479 ,  H01L21/822 ,  H01L21/8234 ,  H01L21/8242 ,  H01L21/8244 ,  H01L21/8246 ,  H01L27/04 ,  H01L27/105 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： Disclosed is a method of manufacturing a semiconductor device, comprising forming a bottom electrode film of a capacitor above a semiconductor substrate, forming a dielectric film of the capacitor on the bottom electrode film, forming a top electrode film of the capacitor on the dielectric film, and forming a hydrogen barrier film after forming the top electrode film, the hydrogen barrier film preventing hydrogen from diffusing into the dielectric film, wherein forming the hydrogen barrier film includes forming an oxide film containing silicon and nitriding the oxide film.

摘要翻译： 公开了一种制造半导体器件的方法，包括在半导体衬底上形成电容器的底部电极膜，在底部电极膜上形成电容器的电介质膜，在电介质膜上形成电容器的顶部电极膜， 在形成顶电极膜之后形成氢阻挡膜，防止氢扩散到电介质膜中的氢阻挡膜，其中形成氢阻挡膜包括形成含硅氧化膜并氮化氧化膜。

公开(公告)号：US20050110062A1

公开(公告)日：2005-05-26

申请号：US10954183

申请日：2004-10-01

申请人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

发明人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

IPC分类号： H01L29/41 ,  H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L29/76

CPC分类号： H01L28/65 ,  H01L21/7687 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/55

摘要： A semiconductor device comprises a semiconductor substrate including a diffusion area, a capacitor provided above the semiconductor substrate and including a lower electrode, a dielectric film, and an upper electrode, a plug provided between the semiconductor substrate and the capacitor and having a lower end connected to the diffusion area and an upper end connected to the lower electrode, and a dummy plug provided between the semiconductor substrate and the capacitor and having a lower end not connected to the diffusion area and an upper end connected to the lower electrode.

摘要翻译： 一种半导体器件包括：包括扩散区域的半导体衬底，设置在半导体衬底上方并包括下电极，电介质膜和上电极的电容器，设置在半导体衬底和电容器之间并具有下端连接的插头 扩散区域和连接到下电极的上端，以及设置在半导体衬底和电容器之间并具有未连接到扩散区域的下端和连接到下电极的上端的虚拟插头。

公开(公告)号：US07259094B2

公开(公告)日：2007-08-21

申请号：US11110933

申请日：2005-04-21

申请人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

发明人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

IPC分类号： H01L21/44 ,  C23C16/00

CPC分类号： H01L27/11502 ,  C23C14/08 ,  C23C14/5806 ,  H01L21/67115 ,  H01L27/11507 ,  H01L28/65

摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

摘要翻译： 公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板 保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

公开(公告)号：US07190015B2

公开(公告)日：2007-03-13

申请号：US10878051

申请日：2004-06-29

申请人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

发明人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

IPC分类号： H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57

摘要： A semiconductor device including a semiconductor substrate, a capacitor formed above the semiconductor substrate, a first interlayer insulating film formed above the capacitor and having a trench, a wiring formed above the capacitor and formed in the trench, the wiring have a top surface flush with a top surface of the first interlayer insulating film, a first hydrogen barrier film formed in contact with the top surface of the wiring and the top surface of the first interlayer insulating film and preventing hydrogen from diffusing into the capacitor and a second interlayer insulating film formed on the first hydrogen barrier film.

摘要翻译： 一种半导体器件，包括半导体衬底，形成在半导体衬底上的电容器，形成在电容器上方并具有沟槽的第一层间绝缘膜，形成在电容器上方并形成在沟槽中的布线，布线具有与 第一层间绝缘膜的顶表面，与布线的顶表面接触形成的第一氢阻挡膜和第一层间绝缘膜的顶表面，并且防止氢扩散到电容器中，形成第二层间绝缘膜 在第一个氢气阻挡膜上。

公开(公告)号：US07091538B2

公开(公告)日：2006-08-15

申请号：US10954183

申请日：2004-10-01

申请人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

发明人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya

IPC分类号： H01L29/76

CPC分类号： H01L28/65 ,  H01L21/7687 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/55

摘要： A semiconductor device comprises a semiconductor substrate including a diffusion area, a capacitor provided above the semiconductor substrate and including a lower electrode, a dielectric film, and an upper electrode, a plug provided between the semiconductor substrate and the capacitor and having a lower end connected to the diffusion area and an upper end connected to the lower electrode, and a dummy plug provided between the semiconductor substrate and the capacitor and having a lower end not connected to the diffusion area and an upper end connected to the lower electrode.

摘要翻译： 一种半导体器件包括：包括扩散区域的半导体衬底，设置在半导体衬底上方并包括下电极，电介质膜和上电极的电容器，设置在半导体衬底和电容器之间并具有下端连接的插头 扩散区域和连接到下电极的上端，以及设置在半导体衬底和电容器之间并具有未连接到扩散区域的下端和连接到下电极的上端的虚拟插头。

公开(公告)号：US20050255663A1

公开(公告)日：2005-11-17

申请号：US10856868

申请日：2004-06-01

申请人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Karl Hornik ,  Andreas Hiliger

发明人： Katsuaki Natori ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Karl Hornik ,  Andreas Hiliger

IPC分类号： H01L27/105 ,  H01L21/20 ,  H01L21/8246 ,  H01L27/115

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： A semiconductor device according to the present invention comprises a capacitor including a lower electrode, a dielectric material, and an upper electrode. The device further comprises a first protective film which contacts the upper electrode to constitute a columnar structure of films formed by a sputtering process and a second protective film formed above the first protective film by a CVD process.

摘要翻译： 根据本发明的半导体器件包括包括下电极，电介质材料和上电极的电容器。 该装置还包括与上电极接触以构成通过溅射工艺形成的膜的柱状结构的第一保护膜和通过CVD工艺形成在第一保护膜上方的第二保护膜。

公开(公告)号：US20050186767A1

公开(公告)日：2005-08-25

申请号：US11110933

申请日：2005-04-21

申请人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

发明人： Katsuaki Natori ,  Keisuke Nakazawa ,  Koji Yamakawa ,  Hiroyuki Kanaya ,  Yoshinori Kumura ,  Hiroshi Itokawa ,  Osamu Arisumi

IPC分类号： H01L21/28 ,  C23C14/08 ,  C23C14/58 ,  C23C16/00 ,  H01L21/00 ,  H01L21/02 ,  H01L21/20 ,  H01L21/26 ,  H01L21/768 ,  H01L21/8234 ,  H01L21/8246 ,  H01L23/58 ,  H01L27/105 ,  H01L27/115 ,  H01L29/417 ,  H01L29/76 ,  H01L31/062

CPC分类号： H01L27/11502 ,  C23C14/08 ,  C23C14/5806 ,  H01L21/67115 ,  H01L27/11507 ,  H01L28/65

摘要： An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

摘要翻译： 公开了一种用于制造半导体器件的装置，其包括容纳待处理基板的室，该基板具有含有至少一种将成为挥发性金属化合物的成分的金属元素的膜，加热基板 保持在所述室中的吸附剂和设置在所述室中并通过加热所述基板吸附由所述膜产生的挥发性金属化合物的吸附剂。

公开(公告)号：US07573120B2

公开(公告)日：2009-08-11

申请号：US11170316

申请日：2005-06-30

申请人： Katsuaki Natori ,  Hiroyuki Kanaya ,  Koji Yamakawa

发明人： Katsuaki Natori ,  Hiroyuki Kanaya ,  Koji Yamakawa

IPC分类号： H01L29/93

CPC分类号： H01L27/11507 ,  G11C11/22 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02197 ,  H01L21/022 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02356 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31691 ,  H01L27/11502 ,  H01L28/55 ,  H01L28/65

摘要： According to an aspect of the present invention, there is provided a semiconductor device comprising a semiconductor substrate, a capacitor which is disposed above the semiconductor substrate and in which a dielectric film is held between lower and upper electrodes, an oxide film formed in such a manner as to coat the capacitor and having a thickness of 5 nm or more and 50 nm or less, and a protective film formed on the oxide film by an ALD process.

摘要翻译： 根据本发明的一个方面，提供了一种半导体器件，包括半导体衬底，电容器，其设置在半导体衬底上方，并且电介质膜保持在下电极和上电极之间，形成在这种 作为涂敷电容器的厚度为5nm以上且50nm以下的方式，以及通过ALD工艺在氧化物膜上形成的保护膜。

公开(公告)号：US07233040B2

公开(公告)日：2007-06-19

申请号：US10833096

申请日：2004-04-28

申请人： Keisuke Nakazawa ,  Koji Yamakawa ,  Katsuaki Natori ,  Soichi Yamazaki ,  Hiroshi Itokawa ,  Hiroyuki Kanaya

发明人： Keisuke Nakazawa ,  Koji Yamakawa ,  Katsuaki Natori ,  Soichi Yamazaki ,  Hiroshi Itokawa ,  Hiroyuki Kanaya

IPC分类号： H01L29/94

CPC分类号： H01L27/11502 ,  H01L21/02197 ,  H01L21/02266 ,  H01L21/31691 ,  H01L27/11507 ,  H01L28/55 ,  H01L28/65

摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, and a capacitor provided above the semiconductor substrate and including a film which contains Pb, Sr, Zr, Ti, Ru and O and a dielectric film which contains Pb, Zr, Ti and O and which is provided on the film containing Pb, Sr, Zr, Ti, Ru and O.

摘要翻译： 公开了一种半导体器件，包括半导体衬底和设置在半导体衬底之上的电容器，并且包括含有Pb，Sr，Zr，Ti，Ru和O的膜和包含Pb，Zr，Ti和O的电介质膜， 提供在含有Pb，Sr，Zr，Ti，Ru和O的膜上