发明授权
- 专利标题： Method of aligning nanotubes and wires with an etched feature
- 专利标题（中）： 用蚀刻特征对准纳米管和导线的方法
-
申请号： US11304801申请日： 2005-12-14
-
公开(公告)号： US07575693B2公开(公告)日： 2009-08-18
- 发明人: Colin D. Yates , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
- 申请人： Colin D. Yates , Thomas Rueckes , Steven L. Konsek , Mitchell Meinhold , Claude L. Bertin
- 申请人地址： US MA Woburn
- 专利权人： Nantero, Inc.
- 当前专利权人： Nantero, Inc.
- 当前专利权人地址： US MA Woburn
- 代理机构： Wilmer Cutler Pickering Hale and Dorr LLP
- 主分类号： H01L21/302
- IPC分类号： H01L21/302
摘要：
A method of forming an aligned connection between a nanotube layer and an etched feature is disclosed. An etched feature is formed having a top and a side and optionally a notched feature at the top. A patterned nanotube layer is formed such that the nanotube layer contacts portions of the side and overlaps a portion of the top of the etched feature. The nanotube layer is then covered with an insulating layer. Then a top portion of the insulating layer is removed to expose a top portion of the etched feature.
公开/授权文献
信息查询
IPC分类:
