Invention Grant
- Patent Title: Focused ion beam processing method
- Patent Title (中): 聚焦离子束加工方法
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Application No.: US11542434Application Date: 2006-10-03
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Publication No.: US07576340B2Publication Date: 2009-08-18
- Inventor: Ryoji Hagiwara , Yasuhiko Sugiyama , Tomokazu Kozakai
- Applicant: Ryoji Hagiwara , Yasuhiko Sugiyama , Tomokazu Kozakai
- Applicant Address: JP Chiba
- Assignee: SII Nano Technology Inc.
- Current Assignee: SII Nano Technology Inc.
- Current Assignee Address: JP Chiba
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2005-289717 20051003
- Main IPC: H01J37/30
- IPC: H01J37/30 ; H01J37/244

Abstract:
There is provided a focused ion beam processing method in which damage to a workpiece is minimized when the surface of the workpiece is irradiated and processed with an ion beam. The method comprises the steps of: generating an acceleration voltage between an ion source and a workpiece; focusing an ion beam emitted from the ion source; and applying the ion beam to a predetermined process position to process the surface of the workpiece. In this process, the energy level of the ion beam produced by the acceleration voltage is set within a range from at least 1 keV to less than 20 keV.
Public/Granted literature
- US20070158590A1 Focused ion beam processing method Public/Granted day:2007-07-12
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