发明授权
US07577022B2 Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage
有权
电元件，存储器件和使用状态变量材料形成的半导体集成电路，其电阻值根据施加的脉冲电压而变化
- 专利标题： Electric element, memory device, and semiconductor integrated circuit formed using a state-variable material whose resistance value varies according to an applied pulse voltage
- 专利标题（中）： 电元件，存储器件和使用状态变量材料形成的半导体集成电路，其电阻值根据施加的脉冲电压而变化
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申请号： US11918983申请日： 2005-09-09
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公开(公告)号： US07577022B2公开(公告)日： 2009-08-18
- 发明人: Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Hiroshi Seki
- 申请人： Shunsaku Muraoka , Koichi Osano , Satoru Mitani , Hiroshi Seki
- 申请人地址： JP Osaka
- 专利权人： Panasonic Corporation
- 当前专利权人： Panasonic Corporation
- 当前专利权人地址： JP Osaka
- 代理机构： McDermott Will & Emery LLP
- 优先权： JP2005-125686 20050422
- 国际申请： PCT/JP2005/017099 WO 20050909
- 国际公布： WO2006/114904 WO 20061102
- 主分类号： G11C11/00
- IPC分类号： G11C11/00
摘要：
An electric element includes: a first electrode (1); a second electrode (3); and a layer (2) connected between the first electrode and the second electrode and having a diode characteristic and a variable resistance characteristic. The layer (2) conducts a substantial electric current in a forward direction extending from one of the first electrode (1) and the second electrode (3) to the other electrode as compared to a reverse direction opposite of the forward direction. The resistance value of the layer (2) for the forward direction increases or decreases according to a predetermined pulse voltage applied between the first electrode (1) and the second electrode (3).
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