Invention Grant
- Patent Title: Optical proximity correction photomasks
- Patent Title (中): 光学接近校正光掩模
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Application No.: US11245522Application Date: 2005-10-07
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Publication No.: US07579121B2Publication Date: 2009-08-25
- Inventor: Ching-Yu Chang
- Applicant: Ching-Yu Chang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F1/14

Abstract:
An optical proximity correction photomask comprises a transparent substrate, a main feature having a first transmitivity disposed on the transparent substrate and at least one assist feature having a second transmitivity disposed to each side of the main feature and on the transparent substrate, wherein the first transmitivity is not equal to the second transmitivity.
Public/Granted literature
- US20070082275A1 Optical proximity correction photomasks Public/Granted day:2007-04-12
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