发明授权
- 专利标题: Wafer level packaging cap and fabrication method thereof
- 专利标题(中): 晶圆级封装盖及其制造方法
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申请号: US11339500申请日: 2006-01-26
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公开(公告)号: US07579685B2公开(公告)日: 2009-08-25
- 发明人: Moon-chul Lee , Woon-bae Kim , Kae-dong Back , Qian Wang , Jun-sik Hwang , Kyu-dong Jung
- 申请人: Moon-chul Lee , Woon-bae Kim , Kae-dong Back , Qian Wang , Jun-sik Hwang , Kyu-dong Jung
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2005-0010647 20050204
- 主分类号: H01L23/12
- IPC分类号: H01L23/12 ; H01L23/043
摘要:
A wafer level packaging cap and method thereof for a wafer level packaging are provided. The wafer level packaging cap covering a device wafer with a device thereon, includes a cap wafer having on a bottom surface a cavity providing a space for receiving the device, and integrally combined with the device wafer, a plurality of metal lines formed on the bottom surface of the cap wafer to correspond to a plurality of device pads formed on the device wafer to be electrically connected to the device, a plurality of buffer portions connected to the plurality of metal lines and comprising a buffer wafer with a plurality of grooves and a metal filled in the plurality of grooves, a plurality of connection rods electrically connected to the plurality of buffer portions and penetrating the cap wafer from a top portion of the buffer portion, and a plurality of cap pads formed on a top surface of the cap wafer and electrically connected to a plurality of connection rods.
公开/授权文献
- US20060175707A1 Wafer level packaging cap and fabrication method thereof 公开/授权日:2006-08-10
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