Invention Grant
- Patent Title: Wafer level packaging cap and fabrication method thereof
- Patent Title (中): 晶圆级封装盖及其制造方法
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Application No.: US11339500Application Date: 2006-01-26
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Publication No.: US07579685B2Publication Date: 2009-08-25
- Inventor: Moon-chul Lee , Woon-bae Kim , Kae-dong Back , Qian Wang , Jun-sik Hwang , Kyu-dong Jung
- Applicant: Moon-chul Lee , Woon-bae Kim , Kae-dong Back , Qian Wang , Jun-sik Hwang , Kyu-dong Jung
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2005-0010647 20050204
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/043

Abstract:
A wafer level packaging cap and method thereof for a wafer level packaging are provided. The wafer level packaging cap covering a device wafer with a device thereon, includes a cap wafer having on a bottom surface a cavity providing a space for receiving the device, and integrally combined with the device wafer, a plurality of metal lines formed on the bottom surface of the cap wafer to correspond to a plurality of device pads formed on the device wafer to be electrically connected to the device, a plurality of buffer portions connected to the plurality of metal lines and comprising a buffer wafer with a plurality of grooves and a metal filled in the plurality of grooves, a plurality of connection rods electrically connected to the plurality of buffer portions and penetrating the cap wafer from a top portion of the buffer portion, and a plurality of cap pads formed on a top surface of the cap wafer and electrically connected to a plurality of connection rods.
Public/Granted literature
- US20060175707A1 Wafer level packaging cap and fabrication method thereof Public/Granted day:2006-08-10
Information query
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