发明授权
US07582921B2 Semiconductor device and method for patterning 有权
用于图案化的半导体器件和方法

Semiconductor device and method for patterning
摘要:
In a masking pattern (a) for patterning word and data lines, length is changed between adjacent word lines so as to be shifted from each other at their tips, and furthermore, the tip of each word line is cut obliquely. It is thus possible to prevent the resist pattern from separation and contact of adjacent patterns. Consequently, it is also possible to prevent break failures of patterned lines and short failures between those patterned lines.
公开/授权文献
信息查询
0/0