发明授权
- 专利标题: Semiconductor device and method for patterning
- 专利标题(中): 用于图案化的半导体器件和方法
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申请号: US11504738申请日: 2006-08-16
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公开(公告)号: US07582921B2公开(公告)日: 2009-09-01
- 发明人: Tomonori Sekiguchi , Toshihiko Tanaka , Toshiaki Yamanaka , Takeshi Sakata , Katsutaka Kimura
- 申请人: Tomonori Sekiguchi , Toshihiko Tanaka , Toshiaki Yamanaka , Takeshi Sakata , Katsutaka Kimura
- 申请人地址: JP Tokyo
- 专利权人: Hitachi, Ltd.
- 当前专利权人: Hitachi, Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Mattingly & Malur, P.C.
- 优先权: JP10-188518 19980703
- 主分类号: H01L27/10
- IPC分类号: H01L27/10
摘要:
In a masking pattern (a) for patterning word and data lines, length is changed between adjacent word lines so as to be shifted from each other at their tips, and furthermore, the tip of each word line is cut obliquely. It is thus possible to prevent the resist pattern from separation and contact of adjacent patterns. Consequently, it is also possible to prevent break failures of patterned lines and short failures between those patterned lines.
公开/授权文献
- US20060273405A1 Semiconductor device and method for patterning 公开/授权日:2006-12-07
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